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  Journal Publications

2000-2006

  • A. Horn, O. Katz, G. Bahir, and J. Salzman, "Surface States and Persistent Photocurrent in GaN HFETs" (to be published, Semicon. Science and Technol, 2006).
  • S. Tomljenovic-Hanic, M. J. Steel, C. M. deSterke, and J. Salzman "Diamond Based Photonic Crystal Microcavities" Optics Express, 14, 3556 – 3562 (2006).
  • P. Olivero, S. Rubanov, P. Reichart, B. C. Gibson, S. T. Huntington, J. R. Rabeau, Andrew D. Greentree, J. Salzman, D. Moore, D. N. Jamieson, S. Prawer, "Characterization of Three-Dimensional Microstructures in Single Crystal Diamond", Diamond and Related Materials, (to be published, 2006).
  • A. Greentree, S. Prawer, and J. Salzman "Quantum Gate for Q Switching in Monolithic Photonic Bandgap Cavities Containing Two Level Atoms", Physical Review A 73, 013818 (2006).
  • D. Mistele, O. Katz, G. Bahir, and J. Salzman "Origin and Engineering of Surface States on AlGaN/GaN-based HFET Devices" Semicon. Science and Technol. 20, 972-978 (2005).
  • S. Zamir, O. Steinberg, U. Tisch, J. Salzman, and E. Zolotoyabko "Simulation of X-ray diffraction Profiles in Imperfect Multilayers by direct Wave Summation" J. Phys. D: Appl. Phys. 38, A239 (2005).
  • Paolo Olivero1, Sergey Rubanov, Patrick Reichart, Brant Gibson, Shane Huntington, James Rabeau, Andrew D. Greentree, Joseph Salzman, David Moore, David N. Jamieson, Steven Prawer, "Ion Beam Assisted Lift-Off Technique for Three-Dimensional Micromachining of Free Standing Single-Crystal Diamond", Advanced Materials, 17, 2427 (2005).
  • O. Katz, G. Bahir and J. Salzman, "Low Frequency 1/f Noise and Persistent Transients in AlGaN/GaN HFETs" IEEE Electron Device Lett. 26, 345 (2005).
  • O. Katz, D. Mistele, B. Meyler, G. Bahir, and J. Salzman "Characteristics of InAlN/GaN High Electron Mobility Field Effect Transistor", IEEE Trans. Electron Devices, 52, 146, (2005).
  • O. Katz, Y. Roichman, G. Bahir, N. Tesler, and J. Salzman "Charge Carrier Mobility in Field Effect Transistors: Analysis of capacitance-conductance measurements.", Semicond. Science and Technol. 20 , 90-94 (2005).
  • O. Katz, D. Mistele, B. Meyler, G. Bahir, and J. Salzman, "InAlN/GaN Heterostructure Field-Effect Transistor DC and Small Signal Characteristics", Electronics Letters, 40 (20), p.1304 (2004)
  • O. Katz, G. Bahir, and J. Salzman ""Trapping and persistent photo-current in GaN Schottky UV detectors"", Appl. Phys. Lett., 84, 4092, (2004).
  • O. Skorka, B. Meyler, and J. Salzman, ""Propagation Loss in GaN-based Ridge Waveguides"", Appl. Phys. Lett, 10 May (2004).
  • U. Tisch, E. Finkman, S. Prawer, and J. Salzman ""The atypical temperature evolution of the phonon modes of GaAsN"" , Phys. Status Solidi (c), 1, 1554 (2004).
  • T. Talercio, R. Intartaglia, B. Gil, P. Lefevre, T. Bretagnon, U. Tisch, E. Finkman, J. Salzman, M. Pinault, M. Laugt, and E. Tournie ""From GaAs:N to oversaturated GaAsN: Analysis of the band gap reduction"" , Phys. Rev. B 69, 073303 (2004).
  • J. Salzman and O. Katz “Photonic Crystal Heterostructure Waveguides” Phys. Status Solidi (c) 1, 1531-1536, 2004.
  • O. Kreinin, G. Bahir, and J. Salzman ""Growth of GaN and InGaN layers by Rapid Thermal MOCVD"", Phys. Status Solidi (c), 0, 2059 (2003).
  • J. Salzman, S. Prawer*, B. Meyler, Y. Golana , M. Shandalova, R. Sauerb , N.Teofilovb "" Reduction of Oxygen Contamination in AlN"", Phys. Status Solidi (c) 0, 2541, (2003).
  • O. Katz, A. Horn, G. Bahir, and J. Salzman ""Electron Mobility in Two-Dimensional Electron Gas I – Uniform Carrier Density,  IEEE J. Electron Devices, 50, 2002 (2003).
  • O. Skorka and J. Salzman ""Lateral and Longitudinal Coupled Waveguides in Semiconductor Compound Lasers"", Opt. Lett. 28, 1939 (2003).
  • O. Skorka, J. Salzman and S. Zamir “Coupled Waveguides in GaN-based Lasers” ( J. Opt. Soc. Amer.B 20, 1822 (2003).
  • D. Mistele, A. Horn, O. Katz, T. Rotter, Z. Bougrioua, J. Aderhold, J. Graul, G. Bahir, and J. Salzman; J. Electron Materials 32, 355, (2003).
  • Y. Golan, P. Fini, D. Dahan, F. Wu, S. Zamir, J. Salzman, and J. Speck, “High Quality GaN on Intentionally Roughened C-Sapphire”, Eur. Phys. J. Appl. Phys., 22, 11, (2003).
  • F. Wu, S. Zamir, B. Meyler, J. Salzman, and Y. Golan ,  “Microstructure of GaN grown by Lateral Confined Epitaxy 2. GaN on Patterned Sapphire""  J. electron. Mater,  32, 23,  (2003).
  • S. Zamir, B. Meyler, and J. Salzman “Reduction of cracks in GaN films grown on Si-on-insulator by lateral confined epitaxy”, J. Crystal Growth 243, 375, ( 2002).
  • U. Tisch, E. Finkman, and J. Salzman “The Anomalous Band Gap Bowing in GaAsN” Appl. Phys. Lett, 81, 463, (2002).
  • U. Tisch, E. Finkman, and J. Salzman “Fine Structure of the E1 and E1+?1 Critical Points in GaAsN""  Phys. Rev. B, 65, 153204 (2002).
  • E. Harush, S. Brandon, J. Salzman, and Y. Paz “The Effect of Mass Transfer on the Photoelectrochemical Etching of GaN” (to be published, Semicond. Science and Technol. 2002).
  • O. Katz, B. Meyler, U. Tisch, and J. Salzman “Determination of Band-Gap Bowing for GaAlN Alloys” Phys. Status Solidi (a), 188, 789 (2001).
  • O. Katz, V. Garber, B. Meyler, G. Bahir and J. Salzman “Vertical vs. Lateral GaN Schottky UV Detectors and their Gain Mechanisms”  Phys. Status Solidi (a) 188, 345, (2001).
  • S. Zamir, B. Meyler, J. Salzman, F. Wu, and Y. Golan “Enhanced Photoluminescence from GaN grown by Lateral Confined Epitaxy”  J. Appl. Phys., 91, 1191, 2002.
  • F. Wu, S. Zamir, B. Meyler, J. Salzman, and Y. Golan,  “Microstructure of GaN deposited by Lateral Confined Epitaxy on Patterned Si(111) (to be published, J. Electron. Mater, 2001).
  • O. Katz, V. Garber, B. Meyler, G. Bahir, and J. Salzman “Anisotropy in Detectivity of GaN Schottky UV detectors” Appl. Phys. Lett. 80, 347, (2002).
  • I. Shalish, C.E.M. de Olivera, Y. Shapira, and J. Salzman “Photo-Hall Spectroscopy study of deep levels in GaN”, Phys. Rev. B. 64, 205313, (2001).
  • O. Katz, V. Garber, B. Meyler, G. Bahir, and J. Salzman “Gain Mechanism in GaN Schottky UV Detectors, Appl. Phys. Lett. 79, 1417, (2001).
  • S. Zamir, B. Meyler, and J. Salzman “Laterally Confined Epitaxy of GaN on Silicon Substrates” J. Cryst. Growth, 230 , 345 (2001).
  • H. Tang, J. B. Webb, J. A. Bardwell, S. Raymond, J. Salzman, and C. Uzan-Saguy “Properties of Carbon Doped GaN”, Appl. Phys. Lett. 78, 757 (2001).
  • U. Tisch, O. Katz, B. Meyler, E. Finkman, and J. Salzman “The Dependence of the Refractive Index of AlGaN on Temperature and Composition at Elevated Temperatures” J. Appl. Phys. 89, 2676 (2001).
  • S. Zamir, B. Meyler, and J. Salzman “Thermal Microcrack Distribution Control in GaN Layers on Si Substrates By Lateral Confined Epitaxy”, Appl. Phys. Lett. 78, 288, (2001).
  • I. Shalish, L. Burstein, Y. Shapira, and J. Salzman “Surface States and Surface Oxide in GaN Layers” J. Appl. Phys. 89, 390 (2001).
  • A. Hass Bar-Ilan, S. Zamir, O. Katz, B. Meyler, and J. Salzman “GaN Layer Optimization for High Power Devices, Mater. Sci. Engineer., A302, 14 (2001).
  • S. Zamir, B. Meyler, E. Zolotoyabko, and J. Salzman “The effect of AlN buffer layer on the quality of GaN films grown on Si(111) substrates,  J. Cryst. Growth, 218, 181, (2000).
  • I. Shalish, L. Kronik, G. Segal, Y. Shapira, M. Eizenberg, and J. Salzman “Yellow Luminescence and Fermi Level Pinning in GaN Layers”, Appl. Phys. Lett, 77, 987, (2000).
  • D. Zhi, U. Tisch, S. Zamir, M. Wei, E. Zolotoyabko and J. Salzman, “Quantitative Analysis of Small Amounts of Cubic GaN Phase in GaN Films Grown on Sapphire”, J. Electron. Mater. 29, 457, (2000).
  • I. Shalish, L. Kronik, G. Segal, Y. Shapira, S. Zamir, B. Meyler and J. Salzman, “Grain Boundary Controlled Transport in GaN Layers”, Phys.Rev.B. 61, 15573, (2000).
  • J. Salzman, C. Uzan-Saguy, R. Kalish, V. Richter, and B. Meyler, “Thermally Activated Conductivity in Thin GaN Epitaxial Films”, Appl. Phys. Lett., 76, 1431 (2000).

 
 

Submitted

  • I. Beyn and J. Salzman "High Q photonic crystal nanocavities on diamond for quantum electrodynamics" (submitted 2006).
  • G. Sarusi, O. Moshe, S. Khatsevich, D. H. Rich, J. Salzman, B. Meyler, M. Shandalov, and Y. Golan "Cathodoluminescence study of micro-crack induced stress relief for AlN films on Si(111)" (Submitted 2005).
 

1990-1999


  • I. Shalish, L. Kronik, G. Segal, Y. Shapira, Y. Rosenwaks, U. Tisch and J. Salzman, “Yellow Luminescence and Related Deep Levels in Unintentionally Doped GaN Films”, Phys. Rev. B., 59, 9748 (1999).
  • C. Uzan-Sagui, J. Salzman, R. Kalish, V. Richter, U. Tisch, S. Zamir and S. Prawer, “Electrical Isolation of GaN by Ion Implantation Damage: Experiment and Model”, Appl. Phys. Lett., 74, 2441 (1999).
  • J. Salzman, C. Uzan-Sagui, B. Meyler, and R. Kalish, “The Effect of Grain Boundaries on Electrical Conductivity in Thin GaN Layers”. Phys. Status Solidi, 176, 683 (1999).
  • A. Hass Bar-Ilan, S. Zamir, O. Katz, B. Meyler and J. Salzman, “Multiparameter Statistical Design of Experiments for GaN Growth Optimization”. Phys. Status Solidi 176, 313 (1999).
  • J.W. Lee, J. Salzman, D. Emerson, J.R. Shealy, J.M. Ballantyne, ``Selective Area Growth of GaP on Si by MOCVD", J. Cryst. Growth, 172, 53, (1997).
  • J. Salzman and H. Temkin, ``III-V-N Compounds for Infrared Applications",  Mater. Sci and Eng., B50, 148-152 (1997).
  • R. Weill, A. Chack, M. Levy, J. Salzman and R. Beserman, ``Ordering Dependence of Pyroelectricity in GaxIn1-xP", J. Appl. Phys., 81, 3729 (1997).
  • E. Maayan, O. Kreinin, D. Veinger, A. Thon, G. Bahir and J. Salzman, ``The Role of the Substrate in Photo-Enhanced MOCVD'', Appl. Phys. Lett., 66, 296-298 (1995).
  • H. Lage, J. Salzman, H. Olesen, B. Jonsson, J. Hanberg, Möller-Larsen and O. Albrektsen, ``Direct Measurement of the Local Intensity Modulation Response of DFB  Lasers'', IEEE Photon. Technol. Lett., 7, 260-262 (1995).
  • J. Salzman, H. Olesen, A. Möller-Larsen, O. Albrektsen, J. Hanberg,
     Norregaard, B. Johnson and B. Tromborg, ``DFB Lasers with an S-bent Waveguide for High Power Single Mode Operation'', IEEE J. Selected Topics in Quantum Electron, Vol. 1, No. 2, pp. 346-355 (1995).
  • H. Olesen, J. Salzman, B. Johnson and B. Tromborg, ``Single Mode Stability of DFB Lasers with Longitudinal Bragg Detuning'', IEEE Photonic Technol. Lett., 7, 461-463 (1995).
  • G. Coudenys, I. Moerman, G. Vermeire, F. Vermaerke, Y. Zhu, P. Van Daele, P. Demeester, E. Maayan, B. Elsner, J. Salzman and E. Finkman, ``Atmospheric and Low Pressure Shadow Masked MOVDE Growth of InGaAs(P)/InP and (In)GaAs/(Ac)GaAs Heterostructure and Quantum Wells'', J. Electron. Materials, 23, 225-232 (1994).
  • E. Zolotoyabko, E. Jacobsohn, D. Shechtman, B. Kantor and J. Salzman, ``X-Ray Diffraction Study of Surface Acoustic Wave Device under Acoustic Excitation'', J. Appl. Phys., 73, 2343-2346 (1994).
  • Y. Betser, A. Finigstein, J. Salzman, and D. Ritter, ``Transmission Through Abrupt Heterojunction Potential Barriers'', IEEE J. Quantum Electron, 30, 1995-2000 (1994).
  • M. Zahler, E. Cohen, J. Salzman, E. Linder and L.N. Pfeiffer, ``Landau Levels of Bragg Confined Electrons and Holes'', Solid State Electronics, 37, 1195-1197 (1994).
  • P. Tiedman-Petterson, J. Salzman and O. Albrektsen, ``Selective Area MOVPE for InP-Based Optoelectronic Components'', Physica Scripta, T54, 194-197 (1994).
  • M. Zahler, E. Cohen, J. Salzman, E. Linder, E. Maayan and L. N. Pfeiffer, ``Exciton Dimensionality and Confinement Studied by  Resonant Raman Scattering in GaAs/AlGaAs Bragg Confining Structures and Superlattices'',  Phys. Rev. B. 50, 5305-5315 (1994).
  • J. Salzman, O. Kreinin and E. Maayan, ``Wavelength Dependence of Photo-Enhanced Organometallic Chemical Vapor Deposition'', J. Thin Solid Films, 225, 91-95 (1993).
  • J. Salzman and E. Maayan, ``A Kinetic Model for Photo-Enhanced Organo\-metallic Chemical Vapor Deposition'', Semicond. Science \& Technol., 8, 1094-1100 (1993).
  • M. Zahler, E. Cohen, J. Salzman, E. Linder and L.N. Pfeiffer, ``Exciton States in GaAs/AlGaAs Bragg Confining Structures Studied by Resonant Raman Scattering'', Phys. Rev. Lett., 71, 420-423 (1993).
  • E. Maayan, O. Kreinin, G. Bahir, J. Salzman, A. Eyal and R. Besserman, ``Selective Growth of GaAs/InGaP Heterostructures by Photo-Enhanced OMCVD'', J. Cryst. Growth, 135, 23-30 (1994).
  • A. Eyal, R. Besserman, S.H. Wei, A. Zunger, E. Maayan, O. Kreinin, J. Salzman, R. Westphalen and K. Heime, ``Influence on Ga Concentration on the Ordering Process of GaInP Grown on GaAs'', Jpn. J. Appl. Phys. 32, 716-719 (1993).
  • Zolotoyabko, E. Jacobsohn, D. Shechtman, B. Kantor, and J. Salzman, ``Acoustic Field Study in Layered Structures by means of X-Ray Diffraction'', J. Appl. Phys., 71, 3134-3137 (1992).
  • M. Zahler, I. Brener, G. Lenz, J. Salzman, E. Cohen and L. Pfeiffer, ``Experimental Evidence of Bragg Confinement of Carriers in Quantum Barriers'', Appl. Phys. Lett., 61, 949-951 (1992).
  • M. Zelikson, J. Salzman, K. Weiser and J. Kanicki, ``Electro-Optic Effect in Hydrogenated Amorphous Silicon Waveguides'', Appl. Phys. Lett. 61, 1664 (1992).
  • N. Tessler, R. Nagar, G. Eisenstein, J. Salzman, U. Koren, G. Raybon,  C.A. Burrus, ``Distributed Bragg Reflector Active Optical Filters'', IEEE J. Quantum Electron., QE-27, 2016-2024 (1991).
  • B. Kantor, S. Zehavi and J. Salzman, ``Phase Shifted Surface Acoustic Waves Resonator'', IEEE Trans. Ultrason. Ferroelec. Freq. Control, 39, 319-323 (1992).
  • J. Salzman, G. Lenz, E. Baruch and E. Finkman, ``Bragg Confinement of Carriers in a Shallow Quantum Well'', Appl. Phys. Lett., 59, 1958-1960 (1991).
  • M. Zelikson, K. Weiser, J. Salzman and J. Kanicki, ``Threshold and Saturation Effects for Photosignals in an Amorphous Silicon Waveguide Structure'', Appl. Phys. Lett., 59, 2660-2662 (1991).
  • M. Zelikson, K. Weiser, J. Salzman and J. Kanicki, ``Determination of Electron and Hole Mobilities in an a-Si:H from Photo-Electric Effects in a Waveguide Structure'', J. Non-Crystalline Solids, 137, 455-458 (1991).
  • G. Lenz and J. Salzman, ``Bragg Reflection Waveguide Composite Structures'', IEEE J. Quantum Electron., QE-26, 519-531, (1990).
  • G. Lenz and J. Salzman, ``Bragg Confinement of Carriers in a Quantum Barrier'', Appl. Phys. Lett., 56, 871-873, (1990).
  • R. Besserman, J. Laborde, C. Cytermann, R. Brenner, J. Salzman and Yu. L. Khait, ``Effect of Impurities on the Thermal Oxidation Process of InP'', Appl. Phys. Lett., 56, 919-921, (1990).
  • G. Lenz and J. Salzman, ``Eigenmodes of Multiwaveguide Structures'', IEEE J. Lightwave Technol., LT-8, 1803-1809 (1990).
  • G. Lenz and B. Ezra and J. Salzman, ``Polarization Properties of Bragg Reflection Waveguides'', Optics Letters, 15, 1288-1290 (1990).

 


Earlier than 1990


  • M. Livio, J. Salzman, G. Shaviv, ``The Formation of Planetary Nebulae with Close Binary Nuclei'', Mont. Not. Royal Astr. Soc. 188, 1-12 (1979).
  • J. Salzman, M. Livio, G. Shaviv, ``The Formation of Planetary Nebulae with Close Binary Nuclei'', in ``Close Binary Stars: Observations and Interpretations'', M.J. Plavec, D.M. Popper and R.K. Ulrich (Eds.), pp. 571-573, Dordrecht, Holland: Reidel, 1980.
  • J. Salzman, A. Schoenberg, A. Katzir, ``Chirped Optical Heterodyne: A Method for Real Time Fourier Processing by Coherent Detection'', J. Appl. Phys. 53, 48-50 (1982).
  • J. Salzman, M. Livio, G. Shaviv,  ``Planetary Nebulae with Close Binary Nuclei-Corrections to Angular Momentum Loss'', Astron. & Astrophys. 109, 201-207 (1982).
  • J. Salzman and A. Katzir, ``Signal to Noise Ratio in Heterodyne Detection-Matrix Formalism'', Appl. Opt 22, 888-890 (1983).
  • J. Salzman, U. Sivan, E. Kapon and A. Katzir, ``Heterodyne Detection Using Multimode Waveguide Y-Couplers'', Appl. Opt. 22, 3931-3932 (1983).
  • A. Katzir, S. Simhony, R. Arieli, J. Salzman, A. Shoenberg and E. Kapon, ``IR Heterodyning Using Silver Halide Fibers'', Opt. Eng. 23, 462-464 (1984).
  • J. Salzman and A. Katzir, ``Heterodyne Detection SNR--Calculations with Matrix Formalism'',  Appl. Opt. 23, 1066-1074 (1984).
  • J. Salzman, T. Venkatesan, R. Lang, M. Mittelstein and A. Yariv,  ``Unstable Resonator Cavity Semiconductor Lasers'', Appl. Phys. Lett. 46, 218-220 (1985).
  • J. Salzman, T. Venkatesan, S. Margalit, and A. Yariv, ``Double Heterostructure Lasers with Facets Formed by a Hybrid Wet and Reactive Ion Etching Technique'', J. Appl. Phys. 57, 2948-2950 (1985).
  •  M. Mittelstein, J. Salzman, T. Venkatesan, R. Lang, and A. Yariv, ``Coherence and Focusing Properties of Unstable Resonator Cavity Semiconductor Lasers'', Appl. Phys. Lett. 46, 923-925 (1985).
  •  J. Salzman, R. Lang, S. Margalit, and A. Yariv, ``Tilted Mirror Semiconductor Laser'', Appl. Phys. Lett. 47, 9-11 (1985).
  •  J. Salzman, R. Lang, and A. Yariv, ``Lateral Coupled Cavity Semiconductor Laser'', Appl. Phys. Lett. 47, 195-197 (1985).
  • J. Salzman, R. Lang, and A. Yariv, ``Frequency Selectivity in Laterally Coupled Semiconductor Lasers'', Opt. Lett. 10, 387-389 (1985).
  • J. Salzman, R. Lang, T. Venkatesan, M. Mittelstein, and A. Yariv, ``Modal Properties of Unstable Resonator Semiconductor Lasers with a Lateral Waveguide'', App. Phys. Lett. 47, 445-447 (1985).
  • J. Salzman, R. Lang, and A. Yariv, ``Efficiency of the Unstable Resonator Semiconductor Lasers'', Elec. Lett. 21, 820-821 (1985).
  • R. Lang, J. Salzman, and A. Yariv, ``Modal Analysis of Laser Resonators with Non-Planar Mirrors'', IEEE J. Quantum Electron. QE-22, 463-470 (1986).
  • A. Larsson, J. Salzman, M. Mittelstein, and A. Yariv, ``Lateral Coherence Properties of Broad Area Semiconduct Quantum Well Lasers'', J. Appl. Phys. 60, 66-68 (1986).
  • J. Salzman, R. Lang, A. Larsson, and A. Yariv, ``The Confocal Unstable Resonator Semiconductor Laser'', Opt. Lett. 11, 507-509 (1986).
  • A. Larsson, P. A. Andrekson, P. Anderson, S. T. Eng, J. Salzman,  and A. Yariv, ``High Speed Dual Wavelength Demultiplexing in a Monolithic Superlattice p-i-n Waveguide Detector'', Appl. Phys. Lett. 49, 233-235 (1986).
  • J. Salzman, and A. Yariv, ``Phase Locked Array of Unstable Resonator Semiconductor Lasers'', Appl.  Phys. Lett. 49, 440-442 (1986).
  • J. Salzman, A. Larsson, and A. Yariv, ``Phase Locked Controlled Filament Laser'', Appl. Phys. Lett. 49, 611-613 (1986).
  • R. Lang, A. Yariv, and J. Salzman, ``Laterally Coupled Cavity Semiconductor Lasers'', IEEE J. Quantum electron. QE-23, 395-400 (1987).
  • R. Lang, M. Mittelstein, A. Yariv, and J. Salzman, ``Unstable Resonator Semiconductor Lasers - Part I:  Theory'', IEE Proc. J. 134, 69-75 (1987).
  • J. Salzman, T. Venkatesan, R. Lang, M. Mittelstein, and A. Yariv, ``Unstable Resonator Semiconductor Lasers--Part II:  Experiment'',  IEE Proc. J. 134, 76-86 (1987).
  • J. Salzman, R. Lang, and A. Yariv, ``Eigenvalues of Unstable Resonator Semiconductors Lasers'', Opt. Common. 61, 332-336 (1987).
  • D. Mehuys, R. Lang, M. Mittelstein, J. Salzman, and A. Yariv, ``Self Stabilized Nonlinear Lateral Modes of Broad Area Lasers'', IEEE J. Quantum Electron, QE 23, 1909-1920 (1987).
  • D. Mehuys, M. Mittelstein, J. Salzman, and A. Yariv, ``Saturable Nonlinear Dielectric Waveguide with Applications to Broad Area Semiconductor Lasers'', Opt. Lett. 12, 953-955 (1987).
  • C.E. Zah, J.S. Osinski, C. Caneau, S.G. Menocal, L.A. Reith,  J. Salzman, F.K. Shokoohi, and T.P. Lee, ``Fabrication and Performance of 1.5m InGaAsP Traveling Wave Amplifiers with Angled Facets'',  Electron Lett. 23, 990-991 (1987).
  •  J. Salzman, J. Osinski, R. Bhat, K. Cummings, and L. Harriot, ``The Cross Coupled Cavity Semiconductor Laser''. Applied Physics Lett. 52, 767-769 (1988).
  • J. Salzman, R. Hawkins, and T.P. Lee,  ``Modal Coupling in Tilted Mirror Waveguide Lasers and Amplifiers''. Opt. Lett. 13, 455-457 (1988).
  • J. Salzman, R. Hawkins, C.E. Zah, S.`Menocal, and T.P. Lee, ``The Tilted Waveguide Semiconductor Laser Amplifier''. J. Appl. Phys. 64, 2240-2242 (1988).
  • P. Einziger and J. Salzman, ``The Plane Wave Approach for Tilted Waveguides'', Opt. Lett. 13, 1135-1137 (1988).
  • Y. Khait, J. Salzman and R. Besserman, ``Kinetics of Gradual Degradation in Semiconductor Lasers and Light Emitting Diodes'', Appl. Phys. Lett. 53, 2135-2137 (1988).
  • G. Lenz and J. Salzman, ``Bragg Reflection Waveguide Directional Couplers'', SPIE Proceedings Vol. 1038, 63-74 (1989).
  •  Yu. L. Khait, J. Salzman and R. Besserman, ``Kinetic Model for Material Structural Changes and Gradual Degradation in Semiconductor Lasers and Light Emitting Diodes'', SPIE Proceedings, Vol. 1038, 531-538 (1989).
  • J. Salzman, Yu. L. Khait and R. Besserman, ``Material Evolution and Gradual Degradation in Semiconductor Lasers and Light Emitting Diodes'', Electron. Lett. 21, 244-246 (1989).
  • J. Salzman and G. Lenz, ``The Bragg Reflection Waveguide Directional Coupler'', IEEE Photonics Technol. Lett., 1, 319 (1989).
  •  Yu. L. Khait, J. Salzman and R. Besserman, ``Pressure Dependence of Semiconductor Laser Degradation'', Appl. Phys. Lett., 55, 1170 (1989).