Conference Proceedings

Graduate Students
Nitride MOCVD Lab
Art - Sculptures

  Research Interests

  Nitride Semiconductor Devices
  Photonic Devices
  Semiconductor Lasers, Light Emitting Diodes, Integrated Optics
  Epitaxial Crystal Growth
  Microfabrication and Characterization of semiconductor Devices

  Contact Me

   Address: Department of Electrical Engineering
                     Technion, Israel Institute of Technology
                     Technion City, Haifa 32000, Israel
   Office:      Room 213, Wolfson building

  Phone:     +972-4-8294698
  Fax:          +972-4-8322185

Biographical Information

Joseph Salzman was born in Buenos Aires, Argentina, in 1945. He received his BSc., MSc., and PhD. in physics from Tel-Aviv University in 1973, 1979, and 1984, respectively. He then became a Bantrell Post-doctoral Fellow at the California Institute of Technology, in Applied Physics (1984-1986). In 1986 he joined Bell Communication Research as a Member of Technical Staff, working in Photonic Research.
In 1987 he became a Senior Lecturer, in 1993 an Associate Professor, and in 2003 a Full Professor at the Department of Electrical Engineering,  Technion – The Israel Institute of Technology, in Haifa, Israel. In 1993-1994 he was a Visiting Professor in TeleDanmark Research, Copenhagen, Denmark, and in 1994-1995 a Visiting Professor at Cornell University, Ithaca, N.Y. At the Technion, Dr. Salzman is the Head of the Laboratory for Novel Semiconductors for Photonic and Electronic Applications, in which epitaxial growth of thin semiconductor films is being performed by Organometallic Vapor Phase Epitaxy. Since 1999, the laboratory activities concentrate on the development of III-Nitride semiconductors, the study of the material properties, microfabrication of photonic and electronic devices, and device studies.
At the Technion, Prof. Salzman is a member of the Solid State Institute, and the Microelectronics Research Center.