Nitride MOCVD Lab
Art - Sculptures
Nitride Semiconductor Devices
Semiconductor Lasers, Light Emitting Diodes, Integrated Optics
Epitaxial Crystal Growth
Microfabrication and Characterization of semiconductor Devices
Address: Department of Electrical Engineering
Technion, Israel Institute of Technology
Technion City, Haifa 32000, Israel
Office: Room 213, Wolfson building
Joseph Salzman was born in Buenos Aires, Argentina, in 1945. He received his BSc., MSc., and PhD. in physics from Tel-Aviv University in 1973, 1979, and 1984, respectively. He then became a Bantrell Post-doctoral Fellow at the California Institute of Technology, in Applied Physics (1984-1986). In 1986 he joined Bell Communication Research as a Member of Technical Staff, working in Photonic Research.
In 1987 he became a Senior Lecturer, in 1993 an Associate Professor, and in 2003 a Full Professor at the Department of Electrical Engineering, Technion – The Israel Institute of Technology, in Haifa, Israel. In 1993-1994 he was a Visiting Professor in TeleDanmark Research, Copenhagen, Denmark, and in 1994-1995 a Visiting Professor at Cornell University, Ithaca, N.Y. At the Technion, Dr. Salzman is the Head of the Laboratory for Novel Semiconductors for Photonic and Electronic Applications, in which epitaxial growth of thin semiconductor films is being performed by Organometallic Vapor Phase Epitaxy. Since 1999, the laboratory activities concentrate on the development of III-Nitride semiconductors, the study of the material properties, microfabrication of photonic and electronic devices, and device studies.
At the Technion, Prof. Salzman is a member of the Solid State Institute, and the Microelectronics Research Center.