A procedure used to produce substrates for Organic FET.
When tested with MEH-PPV (ADS100RE from American dyes) typical threshold values should be around 2V.
For more details write to Yair Ganot
| No. | Name | Process | Measurements |
|---|---|---|---|
| 1 | Pre oxidation cleaning (RCA): | 1) H2SO4:H2O2 (3:1) @ 100°C, 10 min. DI water 14 M&# 937;. 2) HF:H2O (1:50) @ RT 15 sec. DI water 14 M&# 937;. 3) NH4OH:H2O2:H2O (1:1:4) @ 80°C, 10 min. DI water 14 M&# 937;. |
|
| 2 | Dry oxidation: | 1) 1000°C, 30 min. (~25nm).
2) Oxide strip: BOE @ RT, 90 sec. 3) 950°C, 250 min. (~80nm). |
Oxide thickness. C-V. |
| 3 | Evaporation Ti:Au | Evaporation Ti: 5nm, Au: 50nm. | |
| 4-7 | These are structure specific steps that depend on the final shape and contact arrangement to be achieved. | ||
| 8 | Level 1:
FETs photolithography (Au:Ti) |
1) Priming 120°C, 10 min., hot plate. 2) P.R. 5214E: 5000 rpm, 60 sec. 3) Prebake: 90C, 15 min., Oven. 4) Exposure: 4.7 sec. 5) Developing: 60 sec. 6) Plasma descum: 200mTorr O2, 100W, 2 min. 7) Postbake: 90°C, 20 min,Oven. |
|
| 9 | Etching Au:Ti | 1) Au etch: I2:NH4I:H2O:C2H5OH (0.5gr:2gr:10ml:15ml) @ RT, 45 sec. DI water rinse: 2 min. 2) P.R. strip: DMF, 5 min. @ 140°C, hot plate. DI water rinse: 2 min. 3) Ti etch: NH4OH:H2O2:H2O (1:1:4), 60 sec.@ RT. DI water rinse: 15 M&# 937;. |
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| 10 | Final tests | Visual inspection: Vickers: Dimensions Au underetch Nanospec – final oxide width. |
C-V: |