June 2008

 

Research Interests.

 

Optical, electronic, and transport properties of compound semiconductors:

1.   II-VI, III-V, and III-Nitrides Quantum well and quantum dot heterostructures and superlattices.

2.   SiGe and SiGeC electronic materials. 

3.   Heterostructures Semiconductor detectors.

 

 

E. FINKMAN

List of Publications

A)        Theses

 

1.      “Spectral Emissivity of the 3.3m Band of Methane at Elevated Temperatures”. M.Sc. Thesis, Technion, 1967. Advisor U. Oppenheim (in Hebrew).

2.     “Raman Scattering and Optical Absorption in Magnetic Crystals”. D.Sc. Thesis, Technion, 1972. Advisor E. Cohen (in Hebrew).

 

B)        Original Papers in Professional Journals, with Referees

 

I. Published

 

1.        E. Finkman, U.P. Oppenheim and A. Goldman, "Integrated Intensity of 3.3m Band of Methane", J. Opt. Soc. Am. 57, 1130-1131 (1967).

2.        A. Goldman, E. Finkman and U.P. Oppenheim, "Spectral Emissivity of the 3.3m Band of Methane at Elevated Temperatures", J. Opt. Soc. Am. 59, 1218-1224 (1969).

3.        E. Finkman, Z. Kam, E. Cohen and G. Gilat, "Accurate Numerical method for Calculating Spectra in Solids - IV. Extension to Trigonal Crystals", J. Phys. Chem. Solids, 32, 2423-2427 (1971).

4.        E. Finkman, E. Cohen and L.G. Van-Uitert, "Vibrational and Electronic Raman Scattering in the Various Phases of  PrxNd1-xAlO3", Proceedings of the Second International Conference on Light Scattering in Solids, Flamerion Press, Paris, 1971, p. 369-372.

5.        E. Finkman, E. Cohen and L.G. Van-Uitert, "Electronic Raman Effect and Ion-Lattice Interaction in  NdA1O3 ", Phys. Rev. B7, 2899-2909 (1973).

6.        E. Finkman and J. Tauc, "Lattice Vibrations of Semiconductors with a Defect Zinc-Blende Structures", Phys. Rev. Letters 31, 890-893 (1973).

7.        E. Finkman, A.P. DeFonzo and J. Tauc, "Raman Spectra of Liquid As2S3 and their Temperature Dependence", Amorphous and Liquid Semiconductors ed. J. Stuke and W. Brenig. Taylor and Francis, London 1974, p. 1275-1280.

8.        E. Finkman and A. Rizzo, "Lattice Vibrations and the Crystal Structure of Gas and GaSe", Solid State Commun. 15, 1841-1845 (1974).

9.        E. Finkman, A.P. DeFonzo and J. Tauc, "Raman Studies of the Crystallization of As2Se3" Proceedings of the 12th International Conference on the Physics of Semiconductors, Ed. B.G. Tauber, Stuttgart 1974,  p. 1022-1026.

10.     E. Finkman, J. Tauc, R. Kershaw and A.  Wold, "Lattice Dynamics of Tetrahedrally Bonded Semiconductors Containing Ordered Vacant Sites". Phys. Rev. B11, 3785-3794 (1975).

11.     E. Finkman and Y. Nemirovsky, "Infrared Optical Absorption of Hg1-xCdxTe". J. Appl. Physics, 50, 4356-4361 (1979).

12.     Y. Nemirovsky and E. Finkman, "Anodic Oxide Films on Hg1-xCdxTe". J. of Electrochem. Soc., 126, 768-770 (1979).

13.     Y. Nemirovsky and E. Finkman, "Intrinsic Carrier Concentration of Hg1-xCdxTe". J. Appl. Physics, 50, 8107-8111 (1979).

14.     E. Finkman and Y. Nemirovsky, "Two-Electron conduction in Hg1-xCdxTe". J. Appl. Physics, 53, 1052-1058 (1982).

15.     Y. Nemirovsky, S. Margalit, E. Finkman, Y. Schacham-Diamand and I. Kidron, "Properties of Hg1-xCdxTe Epitaxial Layers Grown in Open Tube System". J. Electronic Materials 11, 133-153 (1982).

16.     E. Finkman, "Determination of Band-Gap Parameters of Hg1-xCdxTe Based on High Temperature Carrier Concentration". J. Appl. Physics 54, 1883-1886 (1983).

17.     A. Muranevich, M. Roitberg and E. Finkman, "Growth of CdTe Single Crystals". J. Crystal Growth 64, 285-290 (1983).

18.     E. Finkman and B. Fischer, "Electrical Transport Measurements in TiS3". Solid State Commun. 50, 25-28 (1984).

19.     E. Finkman and S.E. Schacham, "The Exponential Optical Absorption Band Tail of HgCdTe, J. Appl. Physics 56, 2896-2900 (1984).

20.     S.E. Schacham and E. Finkman, "A New Method for Measuring Ambipolar Mobility and its Implementation in p-Type HgCdTe", J. Appl. Physics 57, 1161-1164 (1985).

21.     S.E. Schacham and E. Finkman, "Recombination Mechanisms in p-Type HgCdTe: Freezeout and Background Flux Effects", J. Appl. Physics 57, 2001-2009 (1985).

22.     E. Finkman and Y. Nemirovsky, "Electrical Properties of Shallow Levels in p-Type HgCdTe". J. Appl. Physics 59, 1205-1211 (1986).

23.     E. Sapir, S.E. Schacham and E. Finkman, "Heterodyne Technique for Measuring Photodetector Frequency Response without RF Interference", Rev. Sci. Inst., 57, 529-533 (1986).

24.     E. Finkman, M.D. Sturge and R. Bhat, "Oscillator Strength, Lifetime and Degeneracy of Resonantly Excited Bound Excitons in GaAs", J. Luminescence 35, 235-238 (1986).

25.     S.E. Schacham and E. Finkman, "Light Modulated Hall Effect for Extending Characterization of Semiconductor Materials", J. Appl. Phys. 60, 2860-2865 (1986).

26.     A. Fraenkel, S.E. Schacham, G. Bahir and E. Finkman, "Lifetime and Carrier Concentration Profile of B+ Implanted p-Type HgCdTe", J. Appl. Physics 60, 3916-3922 (1986).

27.     E. Finkman, M.D. Sturge and M.C. Tamargo, "X-Point Excitons in AlAs/GaAs Superlattices", Appl. Phys. Letters 49, 1299-1301 (1986).

28.     M.C. Tamargo, R.E. Nahory, M.-H. Meynadier, E. Finkman, M.D. Sturge, D.M. Hwang and J. Ihm, "Optical Properties of Thin Layer AlAs/GaAs Superlattices", J. Crystal Growth 81, 109-115 (1987).

29.     M.-H. Meynadier, E. Finkman, M.D. Sturge, J.M. Worlock and M.C. Tamargo, "High Order Resonant Raman Scattering by Combinations and Overtones of Interface Phonons in GaAs/AlAs Short Period Superlattices", Phys. Rev. B35, 2517-2520 (1987).

30.     E. Finkman, M.D. Sturge, M.-H. Meynadier, R.E. Nahory and M.C. Tamargo, "Optical Properties and Band Structure of Short Period GaAs/AlAs Superlattices". J. Luminescence 39, 57-74 (1987).

31.     M.D. Sturge, E. Finkman, and M.C. Tamargo, "Indirect Excitons in Short Period Superlattices".  J. Luminescence 40&41, 425-426 (1988).

32.     G. Bahir and E. Finkman, "Ion Beam Milling Effect on Electrical Properties of HgCdTe".  J. Vac. Sci. Technol. A7, 348-353 (1989).

33.     S.E. Schacham and E. Finkman, "Magnetic Field Effect on the R0A Product of HgCdTe Diodes".  J. Vac. Sci. Technol. A7, 387-390 (1989).

34.     E. Finkman and S.E. Schacham, "Surface Recombination Velocity of Anodic Sulfide and ZnS coated p-HgCdTe".  J. Vac. Sci. Technol. A7, 464-468 (1989).

35.     Hadas Shtrikman and E. Finkman, "Optical Absorption Study of MOCVD grown CdTe-ZnTe Superlattices".  Superlattices and Microstructures, 6, 55-58 (1989).

36.     Hadas Shtrikman, R. Tenne, D. Mahalu, and E. Finkman, "CdTe-ZnTe superlattices: Investigation of the optical properties at room temperature".  Appl. Phys. Letters 55, 553-555 (1989).

37.     S.E. Schacham and E. Finkman, "Surface and Implantation Effects on p-n Junctions", Semicon. Sci. Technol. 5, s41-s44 (1990).

38.     S.E. Schacham and E. Finkman, "Properties of Insulator Interfaces with p-HgCdTe".  J. Vac. Sci. Technol. A8, 1171-1173 (1990).

39.     S.E. Schacham and E. Finkman,  "Interface Properties of Various Passivations of HgCdTe". Optical Engineering 29, 795-799 (1990).

40.     S.E. Schacham and E. Finkman, "Contribution of the Graded Region of HgCdTe Diode to its Saturation Current". Optical Engineering 29, 800-803 (1990).

41.     S.E. Schacham and E. Finkman, "Surface Electrons in Inverted Layers of p-HgCdTe". MRS Proc., 161, 277-283 (1990).

42.     V. Altschul and E. Finkman, "Simple Approximation for Fermi Energy In Non-Parabolic Semiconductors", Appl. Phys. Letters 58, 942-944 (1991).

43.     Y. Salzman, G. Lenz, E. Baruch, and E. Finkman, "Bragg Confinement of Carriers in a Shallow Quantum Well", Appl. Phys. Letters 59, 1858-1860 (1991).

44.     Y. Shacham-Diamand, E. Finkman, Y. Pinkas, and N. Moria "Infrared Study of Structural Changes Induced by Ion-Implantation in SiO2 Spin-On-Glass Films", Appl. Phys. Letters 59, 2953-2955 (1991).

45.     V. Altschul, A. Fraenkel, and E. Finkman, "Effects of Band Nonparabolicity on Two-Dimensional Electron Gas", J. Appl. Phys. 71, 4382-4384 (1992).

46.     S.E. Schacham and E. Finkman "Saturation Current and Excess Carrier Distribution in Exponentially-Graded p-n Junctions", J. Appl. Phys. 71, 5033-5040 (1992).

47.     V. Ariel-Altschul, G. Bahir, and E. Finkman, "Approximations for Carrier Density in Non-Parabolic Semiconductors", IEEE Trans. Electron Devices ED-39, 1312-1316 (1992).

48.     A. Fraenkel, E. Finkman, G. Bahir, A. Brandel, G. Livescu, and M.T. Asom, "Bias Dependence of Transport and Responsivity in Asymmetric Quantum Well Infrared Detectors", Appl. Phys. Letters 61, 1341-1343 (1992).

49.     A. Fenigstein, S.E. Schacham, and E. Finkman, "Covered Electrode HgCdTe Photoconductor Under High Illumination Levels", J. Vac. Sci. Technol. B10, 1611-1616 (1992).

50.     A. Fraenkel, E. Finkman, G. Bahir, A. Brandel, G. Livescu, and M.T. Asom, "Vertical Transport, Transmission Coefficients, and Dwell Time in Asymmetric Quantum Well Structures", Superlattices and Microstructures 12, 557-560 (1992).

51.     Susan J. Zachman, E. Finkman, and G. Bahir, "Adaptation of Deep Level Transient Spectroscopy for Narrow Band Gap Semiconductor Materials", Semicon. Sci. Technol. 8, s90-s94 (1993).

52.     A. Brandel, A. Fraenkel, E. Finkman, G. Bahir, G. Livescu, and M.T. Asom, "Responsivity and Thermionic Current in Asymmetric Quantum Well Infrared Detectors", Semicon. Sci. Technol. 8, s412-s416 (1993).

53.     G. Livescu, E. Finkman, M.T. Asom, L. Luther, J.L. Zilco, and K.D.C. Trapp, "Enhancement of Photoluminescence From DX Centers in AlGaAs Heterostructures", Appl. Phys. Letters 62, 1979-1981 (1993).

54.     G. Caudenis, I. Moerman, G. Vermeir, F. Vermaerke, Y. Zhu, P. Vandaele, P. Demeester, E. Maayan, R. Elsner, J. Salzman, and E. Finkman, "Atmospheric and Low Pressure Shadow Masked MOVPE growth of InGaAs(P)/InP and (In)GaAs/(Al)GaAs Heterostructures and Quantum Wells", J. Electronic Mat. 23, 225-232 (1994).

55.     A. Fraenkel, E. Finkman, S. Maimon, and G. Bahir, "Vertical Drift Mobility of Excited Carriers in Multi Quantum Well Structures", J. Appl. Phys. 75, 3536-3543 (1994).

56.     A. Fenigstein, E. Finkman, G. Bahir, and S.E. Schacham, "Polarization Dependence of Spectral Transmission and Photoconductive Response of a p-Doped Multiple Quantum Well Structure", J. Appl. Phys. 76, 1998-2000 (1994).

57.     A Fenigstein, A. Fraenkel, E. Finkman, G. Bahir, and S.E. Schacham, "Current Induced Intersubband Absorption in GaAs/GaAlAs Quantum Wells", Appl. Phys. Letters 66, 2513-2515 (1995).

58.     M. Mamor , E. Finkman, F. Meyer, K. Bouziane, "W/Si Schottky diodes: Effect of Metal Deposition Conditions on the Barrier Height", MRS Proc. 356, 149-153 (1995).

59.     M. Mamor , E. Dufour-Gergam, E. Finkman, F. Meyer, K. Bouziane, "W/Si Schottky diodes: Effect of Sputtering Deposition Conditions on the Barrier Height", Appl. Surf. Sci. 91, 342-346 (1995).

60.     P. Boucaud, C. Guedj, D. Bouchier, F. H. Julien, J.-M. Lourtioz, S. Bodnar, J.-L. Regolini, and E. Finkman, "Optical Properties of Bulk and Multi-Quantum Wells SiGe:C Heterostructures", Journal of Crystal Growth 157, 410-413 (1995).

61.     J. Boulmer, P. Boucaud, C. Guedj, D. Debarre, D. Bouchier, E. Finkman, S. Prawer, K. Nugent, A. Desmur-Larre, C. Godet, and P. Roca i Cabarrocas, "Realization of Si1-x-yGexCy/Si Heterostructures by Pulsed Laser Induced Epitaxy of C+ Implanted Pseudomorphic SiGe Films and of a-SiGeC:H Films Deposited on Si(100)", J. Cryst. Growth 157, 436-441 (1995).

62.     P. Boucaud, C. Guedj, F.H. Julien, D. Bouchier, J. Boulmer, J.-M. Lourtioz, S. Bodnar, J.L. Regolini, and E. Finkman "Structural and Optical Properties of SiGeC Alloys and Multi-Quantum Wells Grown by Rapid Thermal Chemical Vapor Deposition", MRS Proc. 379, 447-452 (1996).

63.     P. Boucaud, C. Guedj, F.H. Julien, E. Finkman, S. Bodnar, and J.-L. Regolini, "Growth of Si1-x-yGexCy Multi-Quantum-Wells: Structural and Optical Properties", Thin Solid Films, 278, 114-117 (1996).

64.     A. Fenigstein, E. Finkman, G. Bahir, and S.E. Schacham, "C to G Intersubband Electronic Transitions in GaAs/AlAs Type II Structures", Appl. Phys. Letters, 69, 1758-1760 (1996).

65.     S. Maimon, S.E. Schacham, E. Finkman, G. Bahir, and D. Ritter, "Mobility Modulation in Vertical Transport of Hot Electrons in Multi-Quantum-Well Structures", Phys. Rev. B54, 5696-5699 (1996).

66.     M. Mamor, F. Meyer, D. Bouchier, E. Finkman, S. Bodnar, and J.L. Regolini, "Schottky Diodes on Si1-x-yGexCy Alloys: Effect of the C-Incorporation", Appl. Surf. Sci. 102, 134-137 (1996).

67.     E. Finkman, J. Boulmer, P. Boucaud, C. Juedj, D. Bouchier, K. Nugent, and S. Prawer, "Raman Spectroscopy of Si1-x-yGexCy Layers Made by Pulsed Laser Induced Epitaxy", Appl. Surf. Sci. 106, 171-178 (1996).

68. E. Finkman, H. Rücker, F. Meyer, J. Boulmer, D. Bouchier, S. Bodnar, and J.L. Regolini “Local strains in Si1-x-yGexCy Alloys As Deduced From Vibrational Frequencies”, Thin Solid Films 294, 118-121 (1997).

69.    S. Maimon, S. E. Schacham, G. Bahir, and E. Finkman, “Limited Potential Model for Unscreened Ionized Impurity Scattering in Multi-Quatum-Well Structures”, Superlattices and Microstructures 23, 323-329 (1998).

70. E. Finkman and R. Planel, "Photoluminescence Nonlinearities in Mixed Type I Type II Quantum Well Heterostructures", Appl. Phys. Lett. 72, 2604-2606 (1998).

71. S. Maimon, E. Finkman, G. Bahir, S. Schacham, J. Garcia, P.M. Petroff, ``Quantum Dots Infrared Photodetectors (QDIP)'', Intersubband Transitions in Quantum Wells: Physics and Devices. Eds. S. Li & Y-K. Su, Kluwer Academic Pub., Boston 1998, pp. 133-140.

72. M.M. Campbell, N. Mazhoore, K.K. Lee, D.N. Jamieson, and E. Finkman, “Measurement of laser annealed SiCGe by nuclear microprobe analysis”, Nuclear Instruments & Methods in Physics Research, Section B, 136-138, 415-20 (1998).

73. S. Maimon, G.M. Cohen, E. Finkman, G. Bahir, S.E. Schacham, and D. Ritter, “Strain compensated InGaAs/InGaP quantum well infrared detector for mid-wavelength band detection”, Applied Physics Letters, 73, 800-802 (1998).

74. S. Maimon, E. Finkman, G. Bahir, S.E. Schacham, J.M. Garcia, and P.M. Petroff, “Intersublevel Transitions in Quantum Dots Infrared Photodetectors”, Appl. Phys. Letters 73, 2003-2005 (1998).

75. S. Maimon, E. Finkman, S.E. Schacham, D. Ritter, and G. Bahir, “Measurement of Electron Capture Probability in Quantum Wells”, Physica E - Low dimensional Systems and Nanostructures, 2, 228-231 (1998).

76. E. Finkman, S. Maimon, V. Immer, G. Bahir, S.E. Schacham, O. Gauthier-Lafaye, S. Herriot, F.H. Julien, M. Gendry and J. Brault, “Quantum dot infrared photodetectors in new material systems”, Physica E - Low dimensional Systems and Nanostructures, 7, 139-145 (2000).

77. J. Bonan, F. Meyer, E. Finkman, Patricia Warren, and P. Boher “Carbon Dependence of the Dielectric Response Function in Epitaxial SiGeC Layers Grown on Si”, Thin Solid Films, 364, 53-57 (2000).

78. N. Rappaport, E. Finkman, T. Brunhes, P. Boucaud, S. Sauvage, N. Yam, V. Le Thanh, and D. Bouchier, “Midinfrared photoconductivity of Ge/Si self-assembled quantum dots”, Appl. Phys. Lett., 77, 3224-3226 (2000).

79. E. Finkman, S. Maimon, V. Immer, G. Bahir, S. E. Schacham, F. Fossard, F. H. Julien, J. Brault, and M. Gendry, “Polarized front illumination response in intraband quantum dot infrared photodetectors with background limited performance at 77K”, Phys. Rev. B63(4), 045323/1-045323/7, (2001).

80. E. Finkman, F. Meyer, and M. Mamor, “Short-range order and strain in SiGeC alloys probed by phonons”, J. Appl. Phys., 89, 2580-2587 (2001).

81. U. Tisch, B. Meyler, O. Katz, E. Finkman and J. Salzman, “The dependence of the refractive index of AlxGa1-xN on temperature and composition at elevated temperatures”, J. Appl. Phys., 89, 2676-2685 (2001).

82. S. Sauvage, P. Boucaud, T. Brunhes, V. Immer, E. Finkman, and J.-M. Gérard “Midinfrared absorption and photocurrent spectroscopy of InAs/GaAs self-assembled quantum dots”, Appl. Phys. Letters 78, 2327-2329 (2001).

83. P. Boucaud, T. Brunhes, S. Sauvage, N. Yam, V. Le Thanh, D. Bouchier, N. Rappaport, and E. Finkman, “Mid-infrared photoconductivity in Ge/Si self-assembled quantum dots”, Phys. Status Solidi B, 224(1), 233-236 (2001).

84. Y. Gusakov, E. Finkman, G. Bahir and D. Ritter, “The effect of strain in InP/InGaAs quantum well infrared photodetectors on the operating wavelength”, Appl. Phys. Letters, 79, 2508-2510 (2001).

85. U. Tisch, E. Finkman, J. Salzman, “Fine structure of the E1+Δ1 critical point in GaAsN”, Phys. Rev. B65, 153204/1-4, (2002).

86. U. Tisch, E. Finkman, and J. Salzman, “The Anomalous bandgap bowing in GaAsN”, Appl. Phys. Lett. 81, 463 (2002).

87.  S.E. Schacham, G. Bahir, E. Finkman, F.H. Julien, J. Brault, and M. Gendry, "Temperature dependence of responsivity in quantum dot infrared photodetectors”, Physica E, 17, 636-637 (2003).

88.  F. Fossard, A. Helman, F.H. Julien, M. Gendry, J. Brault, E. Péronne, A. Alexandrou, S.E. Schacham, and E. Finkman, "Intraband spectroscopy of self organized InAs/InAlAs nanostructures grown on InP(001)”, Physica E, 17, 82-83 (2003).

89.  U. Tisch, E. Finkman, J. Salzman, “The anomalous composition dependence of the bandgap of GaAsN”,  Physica Status Solidi A: Applied Research  195,  528-531 (2003).

90. S. E. Schacham, W. Shengh, J. P. Leburton, F. Fossard, F. H. Julien, M. Gendry, E. Finkman, N. Shuall, G.  Bahir,  “Enhanced photoconductive signal in InAs quantum dots due to plasma confined microcavities”, Phys. Rev. (Rapid Communications) B68, 041309/1-041309/4, (2003).

91. S.E. Schacham, G. Bahir, E. Finkman, F.H. Julien, F. Fossard, J. Brault, M. Gendry, “Photoconductive spectral analysis of InAs quantum dot under normal incidence”, Infrared Physics & Technology, 44, 509-512 (2003).

92.  N. Rappaport, E. Finkman, P. Boucaud, S. Sauvage, T. Brunhes, V. Le Thanh, D. Bouchier, S.E. Schacham, “Photoconductivity of Ge/Si quantum dot photodetectors”, Infrared Physics & Technology, 44, 513-516 (2003).

93.  T. Taliercio, R. Intartaglia, B. Gil, P. Lefebvre, T. Bretagnon, U. Tisch, E. Finkman, J. Salzman, M.-A. Pinault, M. Laugt, E. Tournie, “From GaAs:N to oversaturated GaAsN: Analysis of the band-gap reduction”, Phys. Rev. B69,  073303/1-4 (2004).

94.    F. Fossard, A. Helman, G. Fishman, F.H. Julien, J. Brault, M. Gendry, E.Peronne, A. Alexandrou, S. E. Schacham G. Bahir and E. Finkman, “Spectroscopy of the electronic states in InAs quantum dots grown on InxAl1–xAs/InP(001)”, Phys. Rev. B69,  155333/1-6 (2004).

95.  U. Tisch, E. Finkman, S. Prawer, J. Salzman “The atypical temperature evolution of the phonon modes of GaAsN”, Physica Status Solidi (c), 1(6), 1554-1559 (2004).

96.  G. Bahir, E. Finkman, F. Fossard, F.H. Julien, J. Brault, M. Gendry, and S.E. Schacham “Polaron recombination of excited carriers in InAs/InxAl(1-x)As quantum dots”, Phys. Rev. B 71, 075327/1-5 (2005).

97.  S.E. Schacham, A. Vardi, V. Le Thanh, and E. Finkman, ” Effect of doping location on photoconductive spectrum of SiGe quantum dots”, Phys. Status Solidi A, 204 (2), 477-482 (2007).

98.  E. Finkman, N. Shuall, A. Vardi, V. Le Thanh, and S. E. Schacham, "Interlevel transitions and two-photon processes in Ge/Si quantum dot photocurrent", J. Appl. Phys. 103, 093114 (2008).

 

 

C)        Participation at Conferences:

 

1.       E. Finkman and E. Cohen, Second International Conference on Light Scattering in Solids, Paris, July 1971, "Vibrational and Electronic Raman Scattering in the Various Phases of PrxNd1-xAlO3".

2.       E. Finkman and E. Cohen, "Crystal Field Levels of Nd+3 in NdAlO3", 1973, APS Meeting in New York, Bul. Amer. Phys. Soc. Series II, Vol. 18, No. 1, 1973.

3.       E. Finkman and E. Cohen, "Magnetic Interaction Between Fe+2 Ions in Fe Doped CdCl2", 1973 March Meeting in San Diego, Bul. Amer. Phys. Soc., Series II, Vol. 18, No. 3, 1973.

4.       E. Finkman, R. Kershaw and J. Tauc, "Lattice Vibrations of Crystalline In2Te3 and Ga2Te3", 1973 March Meeting in San Diego, Bul. Amer. Phys. Soc., Series II, Vol. 18, No. 3, 1973.

5.       E. Finkman, A.P. DeFonzo, and J. Tauc, "High Temperature Raman Spectra of Amorphous As2Se3", 1974 APS March Meeting, Bull. Am. Phys. Soc., Series II, Vol. 19, No. 3, 212 (1974).

6.       A.P. DeFonzo, E. Finkman, and J. Tauc, "Raman Spectra of Partially Ordered Liquids", 1974 APS March Meeting, Bull. Am. Phys. Soc., Series II, Vol. 19, No. 3, 284 (1974).

7.       M.C. Tamargo, E. Finkman and M.D. Sturge, "The 50:50 AlAs-GaAs Superlattice", 1986 APS March Meeting, Bull. Am. Phys. Soc., Vol. 31, No. 3, 251 (1986).

8.       E. Finkman and M.D. Sturge, "Lifetime of the Resonantly Excited Donor-Bound Exciton in GaAs", 1986 APS March Meeting, Bull. Am. Phys. Soc., Vol. 31, No. 3, 351 (1986).

9.       M.-H. Meynadier, E. Finkman, M.D. Sturge, J.M. Worlock, and M.C. Tamargo, "High Order Raman Scattering by Interface Phonons in Short Period Superlattices", 1987 APS March Meeting, Bull. Am. Phys. Soc., Vol. 32, No. 3, 440 (1987).

10.    R.E. Nahory, M.-H. Meynadier, M.C. Tamargo, E. Finkman, and M.D. Sturge, "Electronic Band Structure of Short Period Superlattices", 1987 APS March Meeting, Bull. Am. Phys. Soc., Vol. 32, No. 3, 635 (1987).

11.    A. Fraenkel, S.E. Schacham, and E. Finkman, "Contribution of the n+ Region to the Performance of HgCdTe Photodiodes", Proceedings of the 15th Conference of IEEE in Israel, Tel Aviv, April 1987.

12.    Hadas Shtrikman and E. Finkman, "Optical Absorption Study of MOCVD grown CdTe-ZnTe Superlattices".  4th International Conference on Superlattices, Microstuctures & Microdevices.  Trieste, Italy, August 1988.

13.    E. Finkman and S.E. Schacham, "Surface Recombination Velocity of Anodic Sulfide and ZnS coated p-HgCdTe".  1988 U.S. Workshop on the Physics and Chemistry of Mercury Cadmium Telluride.  Orlando, Florida, October 1988.

14.    G. Bahir and E. Finkman, "Ion Beam Milling Effect on Electrical Properties of HgCdTe". 1988 U.S. Workshop on the Physics and Chemistry of Mercury Cadmium Telluride.  Orlando, Florida, October 1988.

15.    S.E. Schacham and E. Finkman, "Magnetic Field Effect on the RoA Product of HgCdTe Diodes". 1988 U.S. Workshop on the Physics and Chemistry of Mercury Cadmium Telluride.  Orlando, Florida, October 1988.

16.    S.E. Schacham and E. Finkman,  "Interface Properties of Various Passivations of HgCdTe".  Proc. SPIE 1106, 198-205 (1989).

17.    S.E. Schacham and E. Finkman, "Experimental and Theoretical Analysis of the Contribution of the Graded Region to the Current and RoA of HgCdTe Diodes". Proc. SPIE 1106, 206-211 (1989).

18.    S.E. Schacham and E. Finkman, "Surface and Implantation Effects on p-n Junctions", International Conference on Narrow Gap Semiconductors, Gaithersburg, Maryland, USA, June 1989.

19.    S.E. Schacham and E. Finkman, "Properties of Insulator Interfaces with p-HgCdTe". 1989 U.S. Workshop on the Physics and Chemistry of Mercury Cadmium Telluride.  San-Diego, California, October 1989.

20.    S.E. Schacham and E. Finkman, "Surface Electrons in Inverted Layers of p-HgCdTe". Material Research Society Fall Meeting,  "Properties of II-VI Semiconductors", Boston 1989.

21.    Y. Dankner, E. Finkman, Arza Ron, E. Cohen, M.C. Tamargo, and M.D. Sturge, "Gain and Strong-Signal Saturation of Photoexcited Quantum Well Structures", Proc. SPIE 1283, 326-333 (1990).

22.    V. Altschul, E. Finkman, and D. Lubzens, "Small-Signal Modeling of MOSFET for Circuit Design Applications", ESSDERC, Nottingham, England, September 1990.

23.    A. Fenigstein, S.E. Schacham, and E. Finkman, "Covered Electrode HgCdTe Photoconductor Under High Illumination Levels", 1991 U.S. Workshop on the Physics and Chemistry of Mercury Cadmium Telluride.  Dallas, Texas, October 1991.

24.    G. Livescu, E. Finkman, M.T. Asom, L. Luther, J.L. Zilko, and K.D.C. Trapp, "Evidence for Carrier Escape from Active to Cladding in Strained Layer InGaAs-GaAs-AlGaAs Quantum Well Lasers", International Quantum Electronics Conference (IQEC), Vienna, Austria, June 1992.

25.    G. Livescu, M.T. Asom, and E. Finkman, "Fermi Edge Singularities in Asymmetric Quantum Wells", International Quantum Electronics Conference (IQEC), Vienna, Austria, June 1992.

26.    Susan J. Zachman, E. Finkman, and G. Bahir, "Bias Effects on the Electrical Characterization of Deep Levels in HgCdTe", International Conference on Narrow Gap Semiconductors, Southampton, July 1992.

27.    A. Brandel, A. Fraenkel, E. Finkman, G. Bahir, G. Livescu, and M. T. Asom, "Responsivity and Thermionic Current in Asymmetric Quantum Well Infrared Detectors", International Conference on Narrow Gap Semiconductors, Southampton, July 1992.

28.    A. Fraenkel, E. Finkman, G. Bahir, A. Brandel, G. Livescu, and M. T. Asom, "Increased Responsivity and Detectivity in Asymmetric Quantum Well Infrared Detectors", SPIE conference on state of the art advanced infrared detectors, San Diego, July 1992. SPIE Proc. 1735, 217-227 (1992).

29.    A. Fraenkel, E. Finkman, G. Bahir, A. Brandel, G. Livescu, and M. T. Asom, "Vertical Transport, Transmission Coefficients, and Dwell Time in Asymmetric Quantum Well Structures", 6th Int. Conf. on Superlattices and Microdevices, Xi'an, China, August 1992.

30.    A. Fraenkel, E. Finkman, G. Bahir, and S. Maimon, "Optical Gain and Drift Velocity of Photoexcited Carriers in Multi Quantum Well Infrared Detectors", 1st International Symposium on Long Wavelength Infrared Detectors and Arrays: Physics and Applications.  New Orleans, October 1993. Electrochemical Society Proceedings Volume 94-5, 228-238 (1994).

31.    A. Brandel, A. Fraenkel, Y. Betser, E. Finkman, and G. Bahir, "Modeling of Carrier Transport in Multi Quantum Well Infrared Detectors", 1st International Symposium on Long Wavelength Infrared Detectors and Arrays: Physics and Applications.  New Orleans, October 1993. Electrochemical Society Proceedings Volume 94-5, 239-247 (1994).

32.    P. Vagos, F.H. Julien, A. Fenigstein, E. Finkman, and R. Planel, "Infrared Transitions Between C and G States in 'Indirect' GaAs/AlAs Superlattices", 5eme Journes Nationales Microelectronique et Optoelectronique III-V", Ecully, France, June 1994.  Proc. p. 72.

33.    A. Fraenkel, Y. Betser, E. Finkman, and G. Bahir, "Wave Packet Simulation of Escape and Capture Probabilities in Multi Quantum Well Infrared Detectors", SPIE conference- Infrared detectors: State of the art II, San Diego, California, July 1993. SPIE Proc. 2274, 170-180 (1994).

34.    A. Fenigstein, A. Fraenkel, E. Finkman, G. Bahir, and S.E. Schach, "Current Induced Intersubband Absorption in GaAs/GaAlAs Quantum Wells", ICSMM7 - 7th International Conference on Superlattices Microstructures and microdevices.  Banff, Canada, August 1994.

35.    E. Finkman and R. Planel, "Coupling Between C and G states of Type II Short Period Superlattice and an Enlarged Well", ICSMM7 - 7th International Conference on Superlattices Microstructures and microdevices.  Banff, Canada, August 1994.

36.    J. Boulmer, A. Desmur-Larre, C. Guedj, D. Debarre, P. Boucaud, F. H. Julien, E. Finkman, K. Nugent, R. Laval, J.-B. Ozen, H. Yang, D. Bouc, C. G, P. Roca i , G. Galvarin, and C. Clerc, "Realization of Si1-x-yGexCy/Si Heterostructures by Pulsed Laser Induced Epitaxy of C+ Implanted Pseudomorphic SiGe Films and of a-SiGeC:H Films Deposited on Si(100)", SPIE Conference: "Laser Induced Thin Film Processing", San Jose CA, 4-10 Feb. 1995. SPIE Proc. 2403, 362-372 (1995).

37.    M. Mamor, E.Dufour-Gergam, E. Finkman, G.Tremblay, F. Meyer and A. Bouziane, "W/Si Schottky Diodes :Effect of Sputtering Deposition Conditions on the Barrier Height", International Conference on Materials for Advanced Metallizations '95, Radebuf, Germany, March 1995.

38.    M. Mamor, F. Meyer, D. Bouchier, E. Finkman, S. Bodnar and J.L. Regolini, "Schottky Diodes on Si1-x-yGexCy Alloys : effect of the C-incorporation" International Symposium on: "Si Heterostructures", Crete, Greece, Sept. 1995.

39.    E. Finkman, S. Prawer, K. Nugent, J. Boulmer, P. Boucaud, C. Guedj, D. Debarre, and D. Bouchier, "Raman Spectroscopy of Si1-x-yGexCy/Si Layers Made by Pulsed Laser Induced Epitaxy", 2nd International Conference on Photo-Excited Processes and Applications (ICPEPA ‘95), Jerusalem, Israel, Sept. 1995.

40.    A. Fenigstein, E. Finkman, G. Bahir, and S.E. Schacham, "Current Induced Unpolarized Intersubband Absorption in Type II GaAs/AlAs Superlattices", International Conference on Intersubband Transitions in Quantum Wells (ITQW ‘95), Ginosar, Israel, Oct. 1995.

41.    I. Leibe, S. Maimon, E. Finkman, G. Bahir, and D. Ritter, "Resonant Parallel Intersubband Photoconductivity in Multiquantum Wells", International Conference on Intersubband Transitions in Quantum Wells (ITQW  ‘95), Ginosar, Oct 1995.

42.    E. Finkman, H. Rücker, F. Meyer, J. Boulmer, D. Bouchier, S. Bodnar, and J.L. Regolini “Local strains in Si1-x-yGexCy Alloys As Deduced From Vibrational Frequencies”, E-MRS 1996 spring meeting, Strasbourg, France, June 1996.

43.    S. Maimon, S.E. Schacham, G. Bahir, and E. Finkman, “Transport of Hot Electrons in Quasi-Continuum Above Multi-Quantum-Well Structures”, ICSMM9 - 9th International Conference on Superlattices Microstructures and Microdevices. Liege-Belgium, Jul 1996.

44.    E. Finkman and R. Planel, “Optical Nonlinearities in Systems Containing an                 Enlarged Quantum well Embedded in a Type II Superlattice”, 23rd International Conference on the Physics of Semiconductors”, ICPS-23, Berlin, Germany, July 1996.

45.    E. Finkman, F. Meyer, H. Rücker, S. Bodnar, and J.L. Regolini, “Raman Study of the Si-C Bond Hardening in Si1-x-yGexCy Alloys”, 23rd International Conference on the Physics of Semiconductors”, ICPS-23, Berlin, Germany, July 1996.

46.    S. Maimon, E. Finkman, S.E. Schacham, D. Ritter, and G. Bahir, “Measurement of Electron Capture Probability in Quantum Wells”, MSS8 – 8th Annual Conference on Modulated Semiconductor Structures, Santa Barbara, California, USA, July 1997.

47.    S. Maimon, E. Finkman, S.E. Schacham, D. Ritter, and G. Bahir, “Direct Determination of Electron Capture in QWIPs”, The Electrochemical Society 189th Joint International Meeting: 5th International Symposium on Long Wavelength Infrared Detectors and Arrays: Physics and Applications.  Paris, France, September 1997.

48.    U. Tisch, J. Salzman, E. Finkman, G. Bahir, A. Alber, S. Denbaars, L. Coldren, W. van der Stricht, “Temperature dependence of Optical Constants in GaN and GaInN”, E-MRS 1998 Spring Meeting, Strasbourg, France, June 1998.

49.    I. Ilouz, E. Cohen, E. Finkman, and R. Planel, “Magnetic Field and Elctron-Density Dependence of the 2DEG-Hole Photoluminescence in Narrow, GaAs Quantum Wells”, 24th International Conference on the Physics of Semiconductors”, ICPS-24, Jerusalem, Israel, August 1998.

50.    E. Finkman, S. Maimon, G. Bahir, S.E. Schacham, L. Fonseca, J. Shumway, J.P. Leburton, J. Garcia, and P.M. Petroff, “Inter-Sub-Level Photoconductivity Study of the Electronic Structure in Self-Assembled InAs/GaAs Quantum Dot Structures”, 24th International Conference on the Physics of Semiconductors”, ICPS-24, Jerusalem, Israel, August 1998.

51.    S. Maimon, E. Finkman, G. Bahir, S. Schacham, L. Fonseca, J. Shumway, J.P. Leburton, J. Garcia, and P.M. Petroff,  “Electronic Structure of Excited Levels in InAs/GaAs Quantum Dot Infrared Photodetectors”, The 1998 General Conference of the European Physical Society, Condensed Matter Division (CMD-EPS17), Grenoble, France, August 1998.

52.     E. Finkman, S. Maimon, G.M. Cohen, G. Bahir, D. Ritter, “Two-Stack Two-Color Strain Compensated Quantum Well Infrared Photodetector Using InP Technology”, MRS 1998 Fall Meeting, Boston, Ma, USA, Dec. 1998.

53.     E. Finkman, F. Meyer, J. Bonan, “Carbon Dependence of the Dielectric Response Function in Epitaxial SiGeC Layers Grown on Si”, MRS 1998 Fall Meeting, Boston, Ma, USA, Dec. 1998.

54.      E. Finkman, F. Meyer, J. Bonan, Patricia Warren, “The Dielectric Response Function in Epitaxial SiGeC Layers Grown on Si”, The European Materials Research Society 1999 Spring Meeting (E-MRS’99), Strasbourg, France, June 1999.

55.     S. Maimon, E. Finkman, V. Immer, G. Bahir, S.E. Schacham, O. Gauthier-Lafaye, S. Herriot, F.H. Julien, M. Gendry and J. Brault, “Polarized Response in Normal Incidence InAs Quantum Dot Infrared Photodetectors”, 196th Joint International Meeting of The Electrochemical Society, Honolulu, Hawaii, October 17-22, 1999

56.     S.E. Schacham, E. Finkman, V. Immer, G. Bahir, S. Maimon, F.H. Julien, M. Gendry, and J. Brault, “Polarization dependence of plasma resonance effects in quantum dot infrared photodetectors”, QWIP 2000 Workshop July 27-29, 2000 Dana Point, California, USA.

57.    P. Boucaud, T. Brunhes, S. Sauvage, N. Yam, V. Le Thanh, D. Bouchier, N. Rappaport, E. Finkman, “Midinfrared photoconductivity in Ge/Si self-assembled quantum dots”, QD 2000 (International Conference on Semiconductor Quantum Dots), July 31 - August 3, 2000 Munich, Germany.

58.     V. Immer, S.E. Schacham, G. Bahir, E. Finkman, F.H. Julien, M. Gendry and J. Brault, Plasma “Resonant Enhancement of Photoconductivity in Quantum Dot Infrared Photodetectors”, 2000 International Symposium on Formation, Physics and Device Application of Quantum Dot Structures (QDS 2000), September 10 -14, 2000, Hokaido, Sapporo Japan.

59.    S.E. Schacham, E. Finkman, V. Immer, G. Bahir, S. Maimon, F.H. Julien, M. Gendry, and J. Brault, “Resonant enhancement due to waveguiding effects in quantum dot intersubband transitions”, 25th International Conference on the Physics of Semiconductors (ICPS’25), Osaka, Japan, September 17-22, 2000. 

60.    U. Tisch, O. Katz, B. Meyler, E. Finkman and J. Salzman, “Temperature and Composition Dependence of the Refractive Index of AlGaN”, International workshop on Nitride semiconductors (IWN2000), Nagoya, Aichi, Japan, 24-27 Sep. 2000.

61.    N. Rappaport, E. Finkman, M. Elkurdi, P. Boucaud, S. Sauvage, T. Brunhes, V. Le Thanh, and D. Bouchier, “Midinfrared photodetection with Ge/Si self-assembled quantum dots”, E-MRS 2001 spring meeting, Strasbourg, France, June 2001.

62.    U. Tisch, B. Meyler, E. Finkman, and J. Salzman, “The fine structure of the E1 and E1 +Δ critical points in GaNAs”, The Fourth International Conference on Nitride Semiconductors (ICNS-4), Denver, Colorado USA, July 16-20, 2001

63.    S.E. Schacham, G. Bahir, E. Finkman, W. Sheng and J.P. Leburton, “Photoconductive spectra in InAs/InAlAs/InP quantum dot structures”, MSS10 – 10th Annual Conference on Modulated Semiconductor Structures, Linz, Austria, 2001.

64.    S. Sauvage, P. Boucaud, G. Fishman, T. Brunhes, V. Immer, E. Finkman, F. Glotin, R. Prazeres, J.- M. Ortega, and J.- M. Gèrard, “Midinfrared spectroscopy of self- assembled InAs/GaAs quantum dots: a comparison between absorption, photocurrent and 8 band k·p calculation”, International Workshop on Intersubband Transitions in Quantum Wells (ITQW‘2001), Pacific Grove, CA, September 9-11, 2001.

65.    F. Fossard, F.H. Julien*, A. Helman, J. Brault, M. Gendry, E. Peronne, A. Alexandrou, and E. Finkman, “Optical spectroscopy of self-organized InAs/InAlAs quantum dots and quantum wires grown on InP substrate for applications to norman-incidence infrared photodetectors and unipolar lasers”, International Workshop on Intersubband Transitions in Quantum Wells (ITQW‘2001), Pacific Grove, CA, September 9-11, 2001.

66.     S.E. Schacham, G. Bahir, E. Finkman, W. Sheng and J.P. Leburton, “Plasma Enhanced Microcavities in Photoconductive spectra of InAs/InAlAs/InP quantum dot structures”, International Workshop on Intersubband Transitions in Quantum Wells (ITQW‘2001), Pacific Grove, CA, September 9-11, 2001.

67.    U. Tisch, E. Finkman, and J. Salzman, “The Anomalous Band Bowing in GaAsN”, Physics of Light Matter Coupling in Nitrides, PLMCN2, Crete, 25-30 may 2002.

68.    U. Tisch, E. Finkman, and J. Salzman, “The Anomalous Band Bowing in GaAsN“, International Workshop on Nitride Semiconductors, Aachen, Germany, 22 - 25 July 2002.

69.     F. Fossard, A. Helman, K. Moumanis, F. H. Julien, M. Gendry, J. Brault, E. Péronne, A. Alexandrou, E. Finkman, and S. Maimon, “Intraband spectroscopy of self organized InAs/InAlAs nanostructures grown on InP(100)”, International conference on superlattices nanostructures and nano-devices (ICSNN 2002), Toulouse, France, 22-26 July 2002.

70.    S. E. Schacham, G. Bahir, E. Finkman, F. H. Julien, M. Gendry, and J. Brault, “Temperature Dependence of Responsivity in Quantum Dot Infrared Photodetectors”, International conference on superlattices nanostructures and nano-devices (ICSNN 2002), Toulouse, France, 22-26 July 2002.

71.     S.E. Schacham, G. Bahir, E. Finkman, F.H. Julien, M. Gendry, and J. Brault “Recombination Dynamics Effects in Quantum Dot Infrared Photodetectors”, 26th International Conference on the Physics of Semiconductors (ICPS26), Edinburgh, Scotland, 29.7-2.8.2002.

72.    “Photoconductivity of Ge/Si Quantum Dot Photodetectors”, N. Rappaport, E. Finkman, P. Boucaud, S. Sauvage, T. Brunhes, V. Le Thanh, D. Bouchier, and S.E. Schacham. Quantum Well Infrared Photodetectors (QWIP2002), Torino, Italy, Oct. 2002.

73.     “InAs Quantum Dot and Quantum Wire Infrared Photodetectors”, S.E. Schacham, G. Bahir, E. Finkman, F.H. Julien, M. Gendry, and J. Brault. Quantum Dot Infrared Photodetectors (QWIP2002), Torino, Italy, Oct. 2002.

74.    G. Bahir, Y. Gusakov, S. Maimon, G. Cohen, D. Ritter, E. Finkman, “InP-based QWIPs for long-wavelength and mid-wavelength bands detection”, Proceedings of SPIE-The International Society for Optical Engineering, 4820 (Pt. 2, Infrared Technology and Applications XXVIII) 663-670, (2003).

75.    G. Bahir, E. Finkman, S.E. Schacham, J. Brault, M. Gendry, “Polarized front-illumination response in quantum dot infrared photodetectors”, Proceedings of SPIE-The International Society for Optical Engineering, 4820 (Pt. 2, Infrared Technology and Applications XXVIII), 627-634 (2003).

76.    N. Rappaport, E. Finkman, S.E. Schacham, P. Boucaud, D. Bouchier, V. Le Thanh, “Interlevel Transitions and Tunneling in Ge/Si Quantum Dot Photodetectors”, ITQW’2003, Evolene, Switzerland, September 2003.

77.     G. Bahir, N. Akopian, N. Shual, E. Finkman, D. Gershoni, J. Brown, J. Speck, and S. DenBaars, “Optical properties of GaN/AlN quantum dots”, PLMCN3 (Physics of Light Matter Coupling in Nanostructures), Acireale, Sicily, ITALY, October 2003.

78.    U. Tisch, E. Finkman, S. Prawer and J. Salzman, “The effect of N-nano-clustering on the phonon modes of GaAsN”, PLMCN3 (Physics of Light Matter Coupling in Nanostructures), Acireale, Sicily, ITALY, October 2003.

79.    G. Bahir, N. Akopian, N. Shual, A. Vardi, E. Berkowiez, E. Finkman, D. Gershoni, J. Brown, J. Speck, and P. Petroff, "Interband and Intraband Optical Study of GaN/AlN Self Assembled Quantum Dots", International Workshop on Quantum Well Infrared Photodetectors  (QWIP2004), August 8 - 13, 2004, The Canadian Rockies, Delta Lodge at Kananaskis.

80.    S.E. Schacham, E. Finkman, V. Le Thanh, P. Boucaud, and D. Bouchier, "Internal field effects on photoconductivity of Ge/Si Ge/Si quantum dot photodetectors", International Workshop on Quantum Well Infrared Photodetectors  (QWIP2004), August 8 - 13, 2004, The Canadian Rockies, Delta Lodge at Kananaskis.

81.    N. Shual, S.E. Schacham, V. Le Than, and E. Finkman, "Hole Energy Levels and Photoconductivity in Ge/Si Self-Assembled Quantum Dots". The 8th International Conference on Intersubband Transitions in Quantum Wells (ITQW‘2005), Sept. 2005, Cape Cod, MA.

82.    S.E. Schacham and E. Finkman, “Is there phonon bottleneck in quantum dots?”, Proc. Of the 4th Israeli – Russian Bi-National Workshop, 240-251, (2005).

83.    S.E., Schacham Y. Davidzada, A. Vardi, V. Le Thanh, and Finkman E., “Use of FTIR vs. Grating Spectrometer for Spectral Characterization of Ge/Si Quantum Dots”, MMT- 2006 Conference, Ariel, Israel, September 11-15, 2006.

84.    A. Vardi, E. Finkman, S.E. Schacham, and V. Le Thanh, “Performance GeSi Quantum Dots as Photodetectors Depending on Doping Location”, Nanomat2006, Antalya, Turkey, June 2006.

85.    A. Vardi, S.E. Schacham, V. Le Thanh, and E. Finkman, “Effect of Doping Location on Photoconductivity in Ge/Si Quantum Dots”, ICSNN 2006, Istanbul, Turkey, August 2006.

86.    Shmuel E. Schacham, and E. Finkman, “Enhancement of MIR Intraband Transitions by NIR excitation in SiGe QDs”, International Conference on Electronic Properties of Two-dimensional Systems, EP2DS 17, Genova Magazzini del Cotone, July 15-20 2007.

87.     S.E. Schacham and E.Finkman, "Two photon processes in photoconductivity of SiGe quantum dots", ICFSI11, 11th conference on the formation of semiconductor interfaces, Manaus, Brazil, 19-24 August 2007.

88.    E. Alcoby, E. Finkman, Y. Oreg, "Spin Quantum Dot Interferometer Employing the Decoherence in Adiabatic Passage Method", PLMCN-8, 8th International Conference on Physics of Light-Matter Coupling in Nanostructures, Tokyo, Japan, 7-11 April, 2008.

 

 

 

Conference Invited Talks:

 

1.    E. Finkman, "Indirect Short-Period GaAs/AlAs Superlattices", IPS Annual Conference, April 1989.

2.    E. Finkman: "Vertical Transport and Infrared Absorption in Quantum Well Infrared Detectors", The Electrochemical Society 186th Meeting: 2nd International Symposium on Long Wavelength Infrared Detectors and Arrays: Physics and Applications.  Miami Beach, October 1994.

3.    E. Finkman: "Modulation of Mobility for Above Barrier Optically Excited Carriers in InGaAs/InP QWIP", International Workshop on Intersubband Transitions in Quantum Wells (ITQW  ‘95), Ginosar, Israel, Oct. 1995.

4.    E. Finkman, S. Maimon, G. Bahir, S.E. Schacham, and P.M. Petroff, “Realization of Quantum Dots Infrared Photodetectors (QDIP). Could they outperform QWIP?”, International Workshop on Intersubband Transitions in Quantum Wells: Physics and Devices (ITQW97), Tainan, Taiwan, Dec. 1997.

5.    E. Finkman, S. Maimon, V. Immer, G. Bahir, S.E. Schacham, O. Gauthier-Lafaye, S. Herriot, F.H. Julien, M. Gendry and J. Brault, “Quantum dot infrared photodetectors in new material systems”, International Conference on Intersubband Transitions in Quantum Wells  (ITQW’99), Bad-Ischl, Austria, Sep 1999.

 

Research Grants (received within the past 15 years).

 

       ·         2005- 2008       “Properties of Intraband Transitions in Self-Assembled GaN/AlN Quantum Dots”, United-States-Israel Binational Science Foundation (BSF), with Prof. G. Bahir - $ 43,000/year.

 

       ·         2004 - 2006      “Infrared Focal Plane Arrays Based on Semiconductor Quantum Dots”, Devora fund, $30,000/year.

 

       ·         2000 -   2004    “Intersubband Absorption in AlGaN/GaN Coupled Quantum Well Structures” (050-010), United-States-Israel Binational Science Foundation (BSF), with Prof. G. Bahir - $ 45,000/year.

 

       ·         2000 - 2001. “Infrared Focal Plane Arrays Based on Semiconductor Quantum Dots”, (050-080), EORAD – US European Office of Aerospace Research and Development, with Prof. G. Bahir - $ 50,000.

 

       ·         1999 - 2000 “Ge/Si self-assembled quantum dots for infrared photodetection” (051-002), AFIRST- Franco-Israeli Research Cooperation - $ 61,740.

 

       ·         1995- 1999 "Quantum Well Infrared Photodetectors in GaAs/AlGaAs" (051-669), (Research coordinator and principal investigator). Research shared by Technion, Weizmann Institute, and El-Op Industries. Israel Ministry of Science and Arts - »$370,000/year (total Technion’s share for the 4 years $577,534).

 

       ·         1995 - 1999 "Integration of Optoelectronic Devices with Silicon based VLSI Circuits Using Advanced Material Systems and Effects" (095-291), (One of the principal investigators in a multi group project. Research coordinator - Prof. Yosi Shapir, Hebrew University). Research shared by Hebrew University, Technion, and Tel-Aviv University. Israel Ministry of Science and Arts - » $470,000/year. (My share » $30,000/year).

 

       ·         1996 - 1998  “In-situ Temperature Measurements of Silicon Wafer by Optical Methods” (with Prof. J. Salzman), Ministry of Industry and Trade (MAGNET program) » $90,000/year.

 

       ·         1992-1995  "Novel Switching Mechanism Based on Type II Superlattices" (051-742). Israel Ministry of Science and Technology - »$ 15,000/year.

 

       ·         1991-1994 "Infrared Detectors in Semiconductors Quantum Wells" (051-669). Israel Ministry of Science and Technology - total of $90,147 for 3 years.

 

       ·         1990-1994 "HgCdTe Material Characterization, Advanced Infrared Devices, Processing and Characterization". Israel Ministry of Defense. Principal Investigator, Dr. G. Bahir (My share in this research - »$ 20,000./year).

 

       ·         1990-1993 “Intersubband Absorption in Semiconductor Asymmetric Quantum Well Structures” (051-645), United-States-Israel Binational Science Foundation (BSF), with Prof. G. Bahir – total of  $83,147 for the 3 years.