Since 1997, the laboratory activities have been concentrating on Nitride semiconductors. The wide band gap InN, GaN, and AlN, have large direct band gaps of 0.7eV, 3.4eV and 6.2eV, respectively. They form a continuous alloy system covering the visible to UV spectral range. The group III-nitrides are promising materials for a wide variety of optoelectronic applications. The implementation of optical devices has reached a very exciting stage, were both commercial and scientific advantages are visible. Implemented photonic devices include detectors, Light Emitting Diodes (LEDs), and laser diodes (LDs) in the blue to the ultraviolet (UV) range. The electronic devices include high power, and high frequency Field Effect Transistors (FETs), and Heterojunction Bipolar Transistors (HBTs) for power switching applications.
The laboratory activities are listed below:
The growing interest in high power microwave
electronic devices has also focused attention on group III-nitrides.
The electronic device described in this work is a field effect transistors
based on AlGaN/GaN heterostructure (HFET), for high power microwave amplification
and power witching applications.
Publications and Proceedings - O. Katz, D. Mistele, B. Meyler, G. Bahir, and J. Salzman, " Characteristics of InxAl1-xN/GaN High Electron Mobility Field-Effect Transistor ", to be published in IEEE Trans Elec. Dev. (2004)
- O. Katz, D. Mistele, B. Meyler, G. Bahir, and J. Salzman, "InAlN/GaN Heterostructure Field-Effect Transistor DC and Small Signal Characteristics", Electronics Letters, 40 (20), p.1304 (2004)
- O. Katz, Y. Roichman, G. Bahir, N. Tessler, and J. Salzman, " Charge Carrier Mobility in Field Effect Transistors: Analysis of Capacitance-Conductance Measurements", to be published in Semicond. Sci. Tech. (2004)
- O. Katz, A.Horn, G. Bahir, and J. Salzman, “Electron mobility in an AlGaN/GaN two-dimensional electron gas I – carrier concentration dependent mobility”, IEEE Trans. Elec. Dev. 50 (10),p.2002 (2003)
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D. Mistele, T. Rotter, A. Horn, O. Katz, Z. Bougrioua, J. Aderhold, J. Graul, G. Bahir, J. Salzman, "Incorporation of dielectric layers into the processing of III-Nitride based heterostructure filed-effect transistors", Journal of Electronic Materials, 32 (5), p.355 (2003)
- O. Katz, D. Mistele, B. Meyler, G. Bahir, and J. Salzman ” Polarization engineering of InAlN/GaN HFET and the effect on DC and RF performance”, (IEDM2004) International Electron Device Meeting, San-Francisco, USA (2004).
- O. Katz, D. Mistele, A. Horn, G. Bahir, and J. Salzman ” The Dynamics of persistent photo-effects in AlGaN/GaN based HFET”, (IWN2004) International Workshop on Nitride Semiconductors, Pittsburgh, USA (2004).[PDF]
- David Mistele, Oded Katz, Gad Bahir and Joseph Salzman, "Impact of Native Oxides at the Surface and Interface of AlGaN/GaN HFET Devices",(IWN2004) International Workshop on Nitride Semiconductors, Pittsburgh, USA (2004).
- O. Katz, A. Horn, G. Bahir, and J. Salzman, ”AlGaN/GaN Heterojunction FET mobility measurement for non-uniform channel mobility”, (ICNS5) The Fifth International Conference on Nitride Semiconductors, Japan (2003).
- J. Salzman, G. Bahir, O. Katz, “Persistent effects, stretched exponentials, and trapping in Semiconductors” (PLMCN3) The 3rd Physics of Light Matter Coupling in Nanostructures, Acireale, Sicily, Italy (2003).[PDF]
- O. Katz, A. Horn, G. Bahir, and J. Salzman, ”AlGaN/GaN heterojunction fat FET drift mobility measurements and voltage dependencies”, (MRS) Material Research Society 2002 fall meeting, Boston, USA (2002).[PDF]
Presentations
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Technion- AlGaN/GaN 0.4 µm Gate HFET. |
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The implementation
of optical devices has recently reached a very exciting stage, were
both commercial and scientific advantages are visible. Implemented photonic
devices include photodetectors, light emitting diodes (LEDs), and laser
diodes (LDs) in the visible to the ultraviolet (UV) .
Publications and Proceedings |
Technion- InGaN/GaN
green, yellow, red LEDs.
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Presentations 
In recent years, wide band gap materials
such as GaN and AlGaN compounds, are considered most appropriate
for optoelectronics in the UV region.
GaN and the ternary alloy AlGaN have a direct band gap, suitable for
UV detection at wavelengths from 200 nm to 365 nm.
Publications and Proceedings - O. Katz, G. Bahir, and J. Salzman, "Persistent photocurrent and surface trapping in GaN Schottky ultraviolet detectors", Appl. Phys. Lett. 84 (20), p.4092 (2004)
- O. Katz, V. Garber, B. Meyler, G. Bahir, and J. Salzman, ”Anisotropy in detectivity of GaN Schottky Ultraviolet detectors – comparing lateral and vertical geometry”, Appl. Phys. Lett. 80 (3), p.347 (2002)
- O. Katz, V. Garber, B. Meyler, G. Bahir, and J. Salzman, “Gain mechanism in GaN Schottky Ultraviolet detectors”, Appl. Phys. Lett. 79 (10), p.1417 (2001)
- O. Katz, B. Meyler, U. Tisch, J. Salzman, ”Determination of Band-Gap Bowing for AlGaN Alloys”, Phys. Stat. Sol. (a) 188 (2), p.789 (2001)
- O. Katz, V. Garber, B. Meyler, G. Bahir, and J. Salzman, “Vertical versus Lateral GaN Schottky Ultraviolet Detectors and Their Gain Mechanism”, Phys. Stat. Sol. (a) 188 (1), p.345 (2001)
- U. Tisch, B. Meyler, O. Katz, E. Finkman, and J. Salzman, “Dependence of the refractive index of AlxGa1-xN on temperature and composition at elevated temperatures”, J. Appl. Phys. 89 (5), p.2676 (2001).
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Technion -
GaN 2 µm interdigitated Schottky photodetector.
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Presentations