Full Reference List
This list contains many paper that I read and found interesting about memristors - you are welcome to send me more papers that you find interesting as well.
I promise to rearrange this list according to the papers' subjects ASAP.
[1] L.O. Chua, “Memristor – the Missing Circuit Element,” IEEE Transactions on Circuit Theory, Vol. 18, No. 5, pp. 507-519, September 1971.
[2] L.O. Chua and S.M. Kang, “Memristive Devices and Systems,” Proceedings of the IEEE, Vol. 64, No. 2, pp. 209- 223, February 1976.
[3] D.B. Strukov, G.S.Snider, D.R. Stewart & R.S. Williams, "The Missing Memristor Found,” Nature, Vol. 453, pp. 80-83, May 2008.
[4] Y.N. Joglekar, S.J. Wolf, “The elusive memristor: properties of basic electrical circuits”, European Journal of Physics 30 (2009) 661-675.
[5] M. Di Ventra, Y.V. Pershin, L.O.Chua, "Putting memory into circuit elements: memristors, memcapacitors and meminductors", Proceedings of the IEEE, vol. 97, Issue 8, pp. 1371-1372, 2009.
[6] M. Di Ventra, Y.V. Pershin, L.O.Chua, " Circuit elements with memory: memristors, memcapacitors and meminductors", Proceedings of the IEEE, vol. 97, Issue 10, pp. 1717-1724, 2009.
[7] X. Wang, Y. Chen, H. Xi, D. Dimitrov, “Spintronic memristor through spin-torque-induced magnetization motion,” IEEE Electron Device Letters, Vol. 30, No. 3, pp. 294-297, March 2009.
[8] F.Y. Wang, "Memristor for introductory physics", arXiv:0808.0286v1, 2008.
[9]
W.
Wang, Q. Yu, C. Xu, Y. Chui, "Study of filter characteristics based on PWL
memristor", ICCCAS 2009, p. 969 – 973
[10]
O.
Kavehei, A. Iqabal, Y. S. Kimi, K. Eshraghian , S. F. Al-Sarawi, "The Fourth
Element: Characteristics, Modeling and Electromagnetic Theory of the Memristor",
2010, arXiv:1002.2310v1
[11]
N.
Gergel-Hacket, B. Hamdani, B. Dunlap, J. Suehle,
C. Richter, C. Hacker, D. Gundlach, "A flexible solution-processed
memristor", IEEE Electron Device Letters, Vol. 30, No. 7, July 2009
[12]
J.J.
Yang, M.D. Pickett, X. Li, D.A.A. Ohlberg, D.R. Stewart, R.S. Williams,
"Memristive switching mechanism for metal/oxide/metal nanodevices", nature
nanotechnology, vol.3, July 2008
[13]
M.
Stork, J. Hrusak, D. Mayer, "Memristor based feedback systems", Applied
Electronics, p. 237-240 (2009)
[14]
W.
Sun, C. Li, J. Yu, "A memristor based chaotic oscillator", ICCCAS 2009, p.
955-957
[15]
B.C.
Bao, Z. Liu, J.P. Xu, "Steady periodic memristor oscillator with transient
chaotic behaviours", Electronics letters, Vol. 46, No.3 (2010)
[16]
C. Li,
M. Wei, J. Yu, "Chaos Generator Based on a PWL Memristor", ICCCAS 2009,
p. 944-947
[17]
Z.
Lin, H. Wang, "Image encryption based on chaos with PWL memristor in Chua's
circuit", ICCCAS 2009, p. 964-968
[18]
M.
Itoh, L.O. Chua, "Memristor oscillators", International Journal of Bifurcation
and Chaos", Vol. 18, No. 11 (2008) 3183-3206
[19]
Y. Ho,
G.M. Huang, P. Li, "Nonvolatile
Memristor
Memory: Device Characteristics and Design Implications," Proceedings
of the International
Conference on Computer-Aided Design, pp. 485-490,
November 2009.
[20]
T.
Raja, S. Mourad, "Digital logic implementation in Memristor-based crossbar",
2010 Fifth IEEE International Symposium on
Electronic, Design and Application, Delta 2010, p. 303-309
[21]
P.J.
Kuekes, D.R. Stewart, R.S. Williams, "The crossbar latch: Logic value storage,
restoration and inversion in crossbar circuits", Journal of Applied Physics 97,
034301 (2005)
[22]
J.
Borghetti, G.S. Snider, P.J. Kuekes, J.J. Yang, D.R. Stewart, R.S. Williams,
"Memristive
Switches Enable 'Stateful' Logic Operations via Material Implication," Nature,
Vol. 464, pp. 873-876, April 2010
[23]
G.
Snider, "Computing
with Hysteretic Resistor Crossbars,"
Applied Physics A: Materials Science and
Processing, Vol. 80, No. 6, pp. 1165-1172, March 2005.
[24]
A.
Afifi, A. Ayatollahi, F. Raissi, "Implementation of
Biologically Plausible
Spiking Neural Network Models on the Memristor Crossbar-based CMOS/Nano Circuits,"
Proceedings of the European Conference on Circuit
Theory and Design, pp. 563- 566
[25]
S.H.Jo,
T. Chang, I. Ebong, B.B. Bhadviya, P. Mazumder, W. Lu, "Nanoscale memristor
device as synapse in neuromorphic systems", Nano Letter, 2010, 10, 1297-1301
[26]
W.A.
Doolittle, W.L. Calley, W. Henderson, "Complementary oxide memristor technology
facilitating both inhibitory and excitatory synapses for potential neuromorphic
computing applications", ISDRS 2009, p. 1-2
[27]
D.
Batas, H. Friedler, "A memristor
SPICE implementation and a new approach for
magnetic flux controlled memristor modeling", IEEE Transactions on
Nanotechnology, Vol. X, No. X, Month 20XX (not yet published)
[28]
Y.
Chen, X. Wang, "Compact modeling and corner analysis of spintronic memristor",
IEEE/ACM, NANOARCH 2009, p.7-12
[29] Z. Biolek, D. Biolek, V. Biolkova, "SPICE Model of Memristor with Nonlinear Dopant Drift", Radioengineering, Vol. 18, No. 2 , Part 2, pp. 210-214, June 2009.
[30]
K.
Witrisal, "A memristor-based multicarrier UWB receiver", ICUWB 2009, p.679-683
[31]
R.
Sklyar, "Analytical treatment of the signal propagation in an EM
transistor/memristor (EMTM)", INDS 2009, p.116-120
[32] S. Shin, K. Kim, S.M. Kang, "Memristor applications for programmable analog ICs", IEEE Transactions in Nanotechnology, Vol. 10, No. 2, pp. 266-274, March 2011.
[33]
Q.
Xia, W. Robinett, M.W. Cumbie, N. Banerjee, T.J. Cardinalli, J.J. Yang, W. Wu,
X. Li, W.M. Tong, D.B. Strukov, G.S. Snider, G. Mederios-Riberio, R.S. Williams,
"Memristor-CMOS hybrid integrated circuits for reconfigurable logic", Nano
Letters, Vol. XX, No. X, 2009
[34]
H. Li,
M. Hu, "Compact model of memristors and its application in computing systems",
DATE 2010, p. 673-678
[35]
T.
Kawahara, R. Takemura, K. Miura, J. Hayakawa, S. Ikeda, Y.M. Lee, R. Sasaki, Y.
Goto, K. Ito, T. Meguro, F. Matsukura, H. Takahashi, H. Matsuoka, H. Ohno, "2 Mb
SPRAM (Spin-Transfer Torque RAM) with Bit-by-Bit Bi-Directional Current Write
and Parallelizing-Direction Current Read," IEEE Journal of Solid-State Circuits,
Vol. 43, No. 1, pp. 109-120, January 2008
[36]
Q. Yu,
Z. Qin, J. Yu, Y. Mao, "Transmission characteristics study of memristors based
Op-amp circuits", ICCCAS 2009, p. 974-977
[37]
http://www.memristor.org/reference/294/memristive-memristor-applications?utm_source=feedburner&utm_medium=feed&utm_campaign=Feed%3A+Memristor+%28Memristor%29
– Memristors applications
[38]
http://www.memristor.org/reference/295/types-of-memristors?utm_source=feedburner&utm_medium=feed&utm_campaign=Feed%3A+Memristor+%28Memristor%29
– Types of memristors
[40]
K.
Eshraghian, K.R. Cho, O. Kavehei, S.K. Kang, D. Abbot, S.M.S. Kang, "Memristor
MOS Content Addressable Memory (MCAM): Hybrid Architecture for Future High
Performance Search Engines", IEEE Transactions on VLSI Systems, Vol. X, No. X,
2010 (not published yet)
[41]
K.
Witrisal, "Memristor-based stored-reference receiver – the UWB solution?",
Electronics Letters, Vol. 45, No. 14 (July 2009)
[42]
http://www.itrs.net
[43]
B.
Linares-Barranco, T. Serrano-Gotarredona, "
Memristance can
explain Spike-Time-Dependent-Plasticity in
Neural Synapses", Nature Precedings : hdl:10101/npre.2009.3010.1 : Posted 31 Mar
2009
[44]
M.
Liu, Q. Liu, S. Long, W. Guan, "Formation and Annihilation of Cu Conductive
Filament in the Nonpolar Resistive Switching Cu/ZrO2:Cu/Pt ReRAM," Proceedings of IEEE
International Symposium on Circuits and Systems (ISCAS),
pp. 1-4, May June 2010
[45]
V.
Erokhin, "Organic memristors : basic principles", Proceedings of IEEE
International Symposium on Circuits and Systems (ISCAS),
pp. 5-8, May June 2010
[46]
D.
Sacchetto, M. H. Ben-Jamaa,
[47]
S. H.
Jo, K.-H. Kim, T. Chang, S. Gaba, W. Lu, "Si Memristive Devices Applied to
Memory and Neuromorphic Circuits", Proceedings of IEEE
International Symposium on Circuits and Systems (ISCAS),
pp. 13-16, May June 2010
[48]
T.
Prodromakis, K. Michelakis and C. Toumazou, "Fabrication and Electrical
Characteristics of Memristors with TiO2/TiO2+x active layers," Proceedings of IEEE
International Symposium on Circuits and Systems (ISCAS),
pp. 1520-1522, May June 2010
[50]
N. C.
Cady, M. Bergkvist, N. M. Fahrenkopf, P. Z. Rice,
J. Van Nostrand, "Biologically
self-assembled memristive circuit elements", Proceedings of IEEE
International Symposium on Circuits and Systems (ISCAS),
pp. 1959-1962, May June 2010
[51]
W.
Wang, T. T. Jing, B. Butcher ,"FPGA Based on Integration of Memristors and CMOS
Devices", Proceedings of IEEE
International Symposium on Circuits and Systems (ISCAS),
pp. 1963-1966, May June 2010
[52]
D. B.
Strukov, D. R. Stewart, J.
Borghetti, X. Li, M. Pickett, G. Medeiros Ribeiro, W. Robinett, G. Snider, J.P.
Strachan, W. Wu, Q. Xia, J. Joshua Yang, R.S.Williams, "Hybrid CMOS/Memristor
Circuits", Proceedings of IEEE
International Symposium on Circuits and Systems (ISCAS),
pp. 1967-1970, May June 2010
[53]
B. L.
Mouttet, "Memristive Transfer Matrices for Analog Electronics," Proceedings of IEEE
International Symposium on Circuits and Systems (ISCAS),
May June 2010
[54]
M.
Laiho,
[55]
H. Yu,
W. Fei, "A New Modified Nodal Analysis for Nano-Scale Memristor Circuit
Simulation," Proceedings of IEEE
International Symposium on Circuits and Systems (ISCAS),
pp. 3148-3151, May June 2010
[56]
X. Guo,
E. Ipek, T. Soyata, "Resistive
Computation: Avoiding the Power Wall with Low-Leakage, STT-MRAM Based
Computing", Proceedings of
the 37th
International Symposium on Computer Architecture (ISCA),
[57]
O.
Teman, "The Rebirth of Neural Networks", ISCA 2010,
http://isca2010.inria.fr/media/slides/Temam-ISCA2010web.pdf
[58]
Q.
Xia, J. J. Yang, W. Wu, X. Li, R. S. Williams "Self-Aligned Memristor
Cross-Point Arrays Fabricated with One Nanoimprint Lithography Step", Nano
Letters, Article ASAP, XXXX, XXX 2010
[59]
E.
Lehtonen and M. Laiho, "CNN Using Memristors for Neighborhood Connections", 2010
12th International Workshop on Cellular Nanoscale Networks and their
Applications (CNNA), pp. 1-4, 2010.
[60]
E.
Lehtonen and M. Laiho, "Stateful
Implication Logic with Memristors,"
IEEE/ACM International Symposium on Nanoscale Architectures, pp.33-36,
July 2009.
[61]
T.
Berzina et al, "
Optimization of an organic memristor as an adaptive memory
element", J. Appl. Phys. 105, 124515 (2009).
[62]
K.F.
Kao et al, "Phase-Change Memory Devices Operative at 100 ºC," IEEE
Electron Device Letters, Vol. 31, No. 8, August 2010.
[63]
Y.V.
Pershin, M. Di Ventra,
"Practical Approach to Programmable Analog Circuits
with Memristors," IEEE
Transactions on Circuits and Systems I: Regular Papers, vol.57, no.8,
pp.1857-1864, August 2010.
[64]
Mahvash, M., Parker, A.C. , "A
memristor SPICE model for designing memristor circuits," 2010 53rd IEEE
International
[65]
Yu Zhang, Xuliang Zhang, Juebang
Yu , "Approximated SPICE model for memristor," International Conference on
Communications, Circuits and Systems, 2009. ICCCAS 2009, pp.928-931, 23-25
July 2009.
[66]
Rak, A., Cserey, G., "Macromodeling
of the Memristor in SPICE," IEEE Transactions on Computer-Aided Design of
Integrated Circuits and Systems, vol.29, no.4, pp.632-636, April 2010.
[67]
Benderli, S., Wey, T.A., "On
SPICE macromodelling of TiO2 memristors," Electronics Letters,
vol.45, no.7, pp.377-379, March 26 2009.
[68]
Pershin, Y.V., Di Ventra, M.,
"Memristive circuits simulate memcapacitors and meminductors," Electronics
Letters, vol.46, no.7, pp.517 -518, April 1 2010.
[69]
Hyongsuk Kim, Sah, M.P., Changju
Yang, Chua, L.O., "Memristor-based
multilevel memory," 2010 12th International Workshop on Cellular Nanoscale
Networks and Their Applications (CNNA), pp.1-6,
3-5 Feb. 2010.
[70]
Radwan, A.G., Zidan, M.A., Salama,
K.N., "HP Memristor mathematical model for periodic signals and DC," 2010
53rd IEEE International
[71] Rose, G. S., Yao, Y., Tour, J.M., Cabe, A. C., Gergel-Hackett, N.,Majumdar, N., Bean, J. C., Harriott, L. R., and Stan, M. R. , "Designing CMOS/molecular memories while considering device parameter variations," ACM Jouranl on Emerging Technologies in Computers Systems, Vol. 3, Issue 1, Article 3 (April 2007), 24 pages.
[72] Rajendran, J., Manem, H., Rose, G.S. , "NDR based threshold logic fabric with memristive synapses," 9th IEEE Conference on Nanotechnology, IEEE-NANO 2009., pp.725-728, 26-30 July 2009.
[73] Rose, G.S., Stan, M.R. , "A Programmable Majority Logic Array Using Molecular Scale Electronics," IEEE Transactions on Circuits and Systems I: Regular Papers, , vol.54, no.11, pp.2380-2390, Nov. 2007.
[74] Cabe, A.C.; Rose, G.S.; Stan, M.R.; , "Reducing stray currents in molecular memory through data encoding," 7th IEEE Conference on Nanotechnology, IEEE-NANO 2007., pp.70-75, 2-5 Aug. 2007.
[75] Niu, D., Chen, Y., Xu, C., and Xie, Y. , "Impact of process variations on emerging memristor," Proceedings of the 47th Design Automation Conference, DAC' 2010.
[76] Farnood Merrikh-Bayata, Saeed Bagheri Shouraki , "Memristor-based Circuits for Performing Basic Arithmetic Operations," arXiv:1008.3452, 2010.
[77] Y.V. Pershin and M. Di Ventra, "Experimental demonstration of associative memory with memristive neural networks," Neural Networks, Vol. 23, Issue 7, Pages 881-886, September 2010.
[78] Dimin Niuy, Yiran Chenz, Yuan Xie, "Low-power Dual-element Memristor Based Memory Design," Proceedings of the 16th ACM/IEEE International Symposium on Low Power Electronics and Design, pp. 25-30, 2010.
[79] Sung Hyun Jo, Kuk-Hwan Kim and Wei Lu, "High-Density Crossbar Arrays Based on a Si Memristive System," Nano Letters, Vol.9 No.2, pp. 870-874, 2009.
[80] Delgado, A., "Input - Output linearization of memristive systems," Nanotechnology Materials and Devices Conference, pp.154-157, 2009.
[81] P.S. Georgiou, S. Yaliraki, M. Barahona, E.M. Drakakis, "Quantitative Measure of Hysteresis for Bernoulli Memristors," arXiv:1011.0060v1, 2010.
[82] Waser, R., Dittmann, R., Staikov, G., Szot, K., "Redox-Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and Challenges," Advanced Materials, Vol. 21, Issue 25-26, pp. 2632-2663, 2009.
[83] Karg, S. F. et al, "Transition-metal-oxide-based resistance-change memories," IBM Journal of Research and Development, vol.52, no.4.5, pp.481-492, July 2008.
[84] J. Borghetti, Z. Li, J. Strasnicky, X. Li, D. A. A. Ohlberg, W. Wu, D. R. Stewart and R. S. Williams: "A hybrid nanomemristor/transistor logic circuit capable of self-programming," Proceedings of the National Academy of Sciences 106, 1699-1703 (2009).
[85] D. B. Strukov and R. S. Williams: "Exponential ionic drift: fast switching and low volatility of thin-film memristors," Appl. Phys. A. 94, 515-19 (2009).
[86] D. B. Strukov, J. L. Borghetti and R. S. Williams, "Coupled Ionic and Electronic Transport Model of Thin-Film Semiconductor Memristive Behavior," Small 5, 1058-63 (2009).
[87] J. J. Yang, F. Miao, M. D. Pickett, D. A. A. Ohlberg, D. R. Stewart, C. N. Lau and R. S. Williams, "The mechanism of electroforming of metal oxide memristive switches," Nanotechnology 20, 215201 (2009).
[88] J. J. Yang, J. Borghetti, D. Murphy, D. R. Stewart and R. S. Williams, "A Family of Electronically Reconfigurable Nanodevices," Adv. Mats. 21, 3754-38 (2009).
[89] P. Vontobel, W. Robinett, J. Straznicky, P. J. Kuekes, and R. S. Williams, “Writing to and Reading from a Nano-Scale Crossbar Memory Based on Memristors,” Nanotechnology 20, 425204 (2009).
[90] F. Miao, J. J. Yang, J. P. Strachan, D. Stewart, R. S. Williams and C. N. Lau, "Force Modulation of Tunnel Gaps in Metal Oxide Memristive Nanoswitches," Appl. Phys. Letts. 95, 113503 (2009).
[91] M. D. Pickett, D. B. Strukov, J. L. Borghetti, J. J. Yang, G. S. Snider, D. R. Stewart and R. S. Williams, "Switching Dynamics in Titanium Dioxide Memristive Devices," J. Appl. Phys. 106, 074508 (2009).
[92] J. L. Borghetti, D. M. Strukov, M. D. Pickett, J. J. Yang and R. S. Williams, "Electrical Transport and Thermometry of Electroformed Titanium Dioxide Memristive Switches," J. Appl. Phys. 106, 124504 (2009).
[93] J. P. Strachan, J. J. Yang, R. Munstermann, A. Scholl, G. Medeiros-Ribeiro, D. R. Stewart and R. S. Williams, "Structural and chemical characterization of TiO2 memristive devices by spatially-resolved NEXAFS," Nanotechnology 20, 485701 (2009).
[94] D. B. Strukov and R. S. Williams, "Four-Dimensional Address Topology for Circuits with Stacked Multilayer Crossbar Arrays," Proc. Nat. Acad. Sci. 106, 20155-8 (2009).
[95] Q. Lai, L. Zhang, Z. Li, W. F. Stickle, R. S. Williams and Y. Chen, "Analog Memory Capacitor Based on Field Configurable Ion-Doped Polymers," Appl. Phys. Letts. 95, 213503 (2009).
[96] W. M. Tong, J. J. Yang, P. J. Kuekes, D. R. Stewart, R. S. Williams, E. DeIonno, E. E. King, S. C. Witczak and J. V. Osborn, "Radiation hardness of TiO2 memristive junctions," IEEE Transactions on Nuclear Science 57, 1640-43 (2010).\
[97] J. P. Strachan, M. D. Pickett, J. J. Yang, D. Kilcoyne, S. Aloni, G. Medeiros-Ribeiro and R. S. Williams, "Direct Identification of the Conducting Channels in a Functioning Memristive Device," Adv. Mats. 22, 3573-3577 (2010).
[98] W. Robinett, M. D. Pickett, J. Borghetti, Q. Xia, G. S. Snider, G. Medeiros-Ribeiro and R. S. Williams, "A Memristor-Based Nonvolatile Latch Circuit," Nanotechnology 21, 235203 (2010).
[99] J.J. Yang, J.P. Strachan, Q. Xia, A.A. Ohlberg, P.J. Kuekes, R.D. Kelly, W.F. Stickle, D.R. Stewart, G. Mederios-Riberio and R.S. Williams, "Diffusion of adhesion layer metals controls nanoscale memristive switching," Adv. Mats. 22, 4034-38 (2010).
[100] Q. Lai, L. Zhang, Z. Li, W. F. Stickle, R. S. Williams and Y. Chen, "Ionic/Electronic Hybrid Materials in a Synaptic Transistor with Signal Processing and Learning Functions," Adv. Mats. 22, 2248 (2010).
[101] Q. Xia, J. J. Yang, W. Wu, and R. S. Williams, "Self-aligned memristive crosspoint arrays fabricated with one lithography step," NanoLetters 10, 2909-2914 (2010).
[102] M. Versace and B. Chandler, "The Brain of a New Machine," IEEE Spectrum, Vol. 47, Issue 12, pp. 30-37, December 2010.
[103] Y.V. Pershin, and M. Di Ventra, "Neuromorphic Digital and Quantum Computation with Memory Circuit Elements," arXiv:1009.6025v1, 2010.
[104] Y.V. Pershin, and M. Di Ventra, "Memory Effects in Complex Materials and Nanoscale Systems," Advances in Physics, 1460-6976, Volume 60, Issue 2, pp. 145 – 227, 2011.
[105] K. Michelakis, T. Prodromakis and C. Toumazou, “Cost-effective fabrication of nanoscale electrode memristors with reproducible electrical response,” IET Micro and Nano Letters, vol. 5, no. 2, pp. 91-94, 2010.
[106] T. Prodromakis, K. Michelakis and C. Toumazou, “Switching mechanisms in microscale Memristors,” IET Electronic Letters, vol. 46, no. 1, pp. 63-65, 2010.
[107] G. Cserey, A. Rak, B. Jakli and T. Prodromakis, “Cellular Nonlinear Networks with Memristive Cell Devices,” IEEE International Conference on Electronics, Circuits, and Systems, Dec 2010.
[108] T. Prodromakis and C. Toumazou, “A Review on Memristive Devices and Applications,” IEEE International Conference on Electronics, Circuits, and Systems, Dec 2010.
[109] T.
Prodromakis, K. Michelakis and C. Toumazou, “Practical
micro/nano fabrication
[110] Greg Snider, "Architecture and Methods for Computing with Reconfigurable Resistor Crossbar," US Patent 7,203,789, 2007.
[112] A. Delgado, "The memristor as controller," IEEE Nanotechnology Materials and Devices Conference (NMDC), pp.376-379, 12-15 Oct. 2010.
[114] B. L. Mouttet, "The Business Landscape for Memristor Electronics," Knol.
[115] B. L. Mouttet, "Memistors, Memristors, and the Rise of Strong Artificial Intelligence," Knol.
[116] B. L. Mouttet, "An Introduction to Memadmittance Systems Analysis," Knol.
[117] A. Sodhi, G. Gandhi, "Circuit Mimicking TiO2 Memristor: A Plug and Play Kit to Understand the Fourth Passive Element," International Journal of Bifurcation and Chaos, Vol. 20, No. 8, pp. 2537–2545, 2010.
[118] D. Biolek, Z. Biolek, V. Biolková, "PSPICE modeling of meminductor," Analog Integrated Circuits and Signal Processing, Springer Netherlands, 2010.
[119]
[120] G.S.
Snider and R.S. Williams, "Nano/CMOS
Architectures Using a Field-Programmable Nanowire Interconnect,"
Nanotechnology, Vol. 18, No. 3, 035204,
January 2007.
[121] C. Dong, D. Chen, S. Haruehanroengra, W. Wang, "3-D nFPGA: A Reconfigurable Architecture for 3-D CMOS/Nanomaterial Hybrid Digital Circuits," IEEE Transactions on Circuits and Systems I: Regular Papers, vol.54, no.11, pp.2489-2501, Nov. 2007.
[122] D. Tu, M. Liu, W. Wang, and S. Haruehanroengra, “3D CMOL: A 3D FPGA using CMOS/nanomaterial hybrid digital circuits,” IET (IEE) Micro and Nano Letters, vol. 2, no. 2, pp. 40-45, 2007.
[123] N. Bruchon, L. Torres, G. Sassatelli, G. Cambon, "Magnetic Tunnelling Junction based FPGA," FPGA’06, February 22-24, Monterey, California, USA, 2006.
[124] K. K. Likharev and D. B. Strukov, "CMOL: Devices, Circuits, and Architectures," Lecture Notes in Physics, Vol. 680 (Springer, 2005).
[125] D. Wang, Z. Hu, X. Yu, J. Yu , "A PWL model of memristor and its application example," International Conference on Communications, Circuits and Systems (ICCCAS 2009) , pp.932-934, 23-25 July 2009.
[126]
Y.V. Pershin, S. La Fontaine, and M. Di Ventra,
"Memristive
model of amoeba learning," Phys. Rev. E 80, 021926
(2009).
[138] X. Mei, S. Kabehie, A. Stieg, E. Tkatchouk, D. Benitez, W. Goddard, J.I. Zink, K.L. Wang, "A Nano-Scale Molecular Rotor Device for High Density Memory Application," International Semiconductor Device Research Symposium, 2009. ISDRS '09, pp.1-2, 9-11 Dec. 2009.
[139] X. Mei, S. Kabehie, A. Stieg, E. Tkatchouk, D. Benitez, W. Goddard, J.I. Zink, K.L. Wang, "A Molecular-Rotor Device for Nonvolatile High-Density Memory Applications," IEEE ELECTRON DEVICE LETTERS, Vol. 31, No. 9, pp. 1047-1049, September 2010.
[140] V. Mikhelashvili, B. Meyler, S. Yoffis, J. Salzman, M. Garbrecht, T. Cohen-Hyams, W. D. Kaplan, and G. Eisenstein, "A nonvolatile memory capacitor based on Au nanocrystals with HfO2 tunneling and blocking layers," APPLIED PHYSICS LETTERS 95, 023104, 2009.
[141] G. Oster, "A note on memristors," IEEE Transactions on Circuits and Systems, vol.21, no.1, pp. 152, Jan 1974.
[142] Y. Kaneko, H. Tanaka, M. Ueda, Y. Kato, and E. Fujii, "A Novel Ferroelectric Memristor Enabling NAND-type Analog Memory Characteristics," Device Research Conference (DRC) 2010, pp.257-258, 21-23 June 2010.
[143] K. Kerur, "A Study of The Memristor, the Fourth Circuit Element," An M.Sc. Thesis, Kansas State University, Manhattan, Kansas, 2010.
[144] F. Merrikh-Bayat, S. Bagheri Shouraki, "Bottleneck of Using Single Memristor as a Synapse and its Solution," arXiv:1008.3450v2, 2010.
[145]
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