Biography
Gadi Eisenstein
was born on June 20, 1949 in Haifa Israel.
He received his B.Sc. degree from the University of Santa
Clara, Santa Clara California in 1975 and his M.Sc. and Ph.D. degrees from the
University of Minnesota, Minneapolis in 1978 and 1980, respectively.
In 1980 he joined AT&T Bell Laboratories where he was a
member of the Technical Staff in the Photonic Circuits Research Department. In
1989 Gadi Eisenstein joined the faculty of the Technion, Israel Institute of
Technology, where he is professor of Electrical Engineering and head of the
Barbara and Norman Seiden Advanced Optoelectronics Center and holds the Dianne
and Mark Seiden Chair in Optoelectronics.
His current activities are in the fields of nano structure
semiconductor optoelectronics, slow and fast light propagation using nonlinear
fiber devices, compact atomic clocks, semiconductor micro-cavities, nonlinear
semiconductor optical amplifiers, high speed transistors and photo-transistors,
compact short pulse generators, high speed optical communication and RF photonics
systems.
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Research Interests: |
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Slow and fast light propagation in nonlinear fibers
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Miniature atomic clocks
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Semiconductor microcavities
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Dynamical properties of diodes lasers
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Optical amplification
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Noise properties of optoelectronic devices
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Short pulse generation
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High speed HBTs and photo HBTs
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Dielectric thin films for optical coatings
and high k MOS structures
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High speed optical communication systems and RF photonic networks
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Slow and fast light propagation in nonlinear fibers |
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Studies of slow and fast light propagation in nonlinear fibers are performed
with special emphasis on the balance between delay, bandwidth and signal
fidelity. Narrow band parametric amplification and stimulated Brillouin
scattering with modulated pumps are the physical mechanisms employed in our
research. |
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Miniature atomic clocks |
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Miniature atomic clocks based on coherent population trapping in Robidium are
developed. The clocks use a directly modulated VCSEL, a glass Robidium cell and
complicated microwave and control circuitry. |
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Semiconductor microcavities |
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Ultra high Q semiconductor microcavities with embedded single quantum dots are
studied. The microcavities have either a pillar structure or a photonic bandgap
membrane structure. Electro optic tuning is examined and experimental
characterization of various electro optical properities are studied. |
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Dynamical properties of diodes lasers |
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Studies of the dynamical properties of
diode lasers involve a combination of semiconductor physics, nonlinear
optics and nonlinear dynamics. In past years, we have studied the
dynamics of quantum well lasers and recently we are addressing quantum
dot and quantum dash laser dynamics. We are developing advanced
theoretical models and perform different experiments to confirm them. |
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Optical amplification |
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Optical amplification and optical
amplifiers have been a major topic in our group for many years. We are
studying semiconductor optical amplifiers of all kinds (quantum well
quantum dot and quantum dash) as well as nonlinear fiber amplifiers such
as Raman and Parametric Fiber amplifiers. |
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Noise
properties of optoelectronic devices |
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Noise properties of optoelectronic
devices, mainly semiconductor optical amplifiers have been studied in
our group for many years. In particular, we have pioneered theoretical
and experimental work on nonlinear semiconductor optical amplifiers
being the first group to identify the nonlinear signal-noise interaction
which causes a noise spectral hole. This topic has been recently
revisited as we study the noise of nonlinear quantum dot amplifiers
where the inhomogeneous broadened gain and the fast gain dynamics alter
the noise compared to conventional quantum well amplifiers. |
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Short pulse generation |
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Compact optical pulse generators are
of special interest for numerous applications in communication and
signal processing. We have studied diode laser based and fiber model
locked lasers for many years emphasizing low jitter self starting
sources. These involve a combined diode laser photo HBT based
oscillator system and are a special case of a wider family of locked
oscillators we have been studying theoretically and experimentally. |
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High
speed HBTs and photo HBTs |
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InP based HBT’s
and photo-HBTs with state of art performance have been developed at
Technion over the past few years. The use of those advanced transistor
has been a major research topic in our group. Those transistors are used
in a variety of RF photonic applications such as : Optoelectronic
mixers, optoelectronic oscillators for high purity CW or pulsed signals,
DFB laser locking for WDM systems, millimeter wave signal generation and
modulation, multi rate timing
extraction in high speed fiber optics receivers and optical signal
processing. |
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Dielectric thin films for optical coatings and high k MOS
structures |
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Our group has been engaged in
dielectric coating research for two different purposes. One is optical
coating where we specialize in diode laser facet coating mainly broad
band low reflectivity AR coatings. The second is high-k
dielectrics for MOS devices. We have developed a variety of such
high-k materials including Ta2O5 TiO2
Al2O3 Er2O3 and
combination thereof. In addition, we have developed a series of
experimental techniques to analyze the current flow across different
junctions and for the determination of current flow mechanisms and the
extraction of physical parameters. |
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High
speed optical communication systems and RF photonic networks |
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Several issues related to system
problems are studied in our group. These include advanced simulations of
WDM links RF photonic systems and schemes for timing extraction. |
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