Gadi Eisenstein

Diane and Mark Seiden Professor of Optoelectronics


               Technion Institute of Technology - The Faculty of Electrical Engineering

               Mayer building, 7th floor, room no. 703,
            phone: +97248294694/4526;  cell+972523220176;  email:


   Prof. Gadi Eisenstein

         Research interest


                          Optical Communication Laboratory



Gadi Eisenstein was born on June 20, 1949 in Haifa Israel.

He received his B.Sc. degree from the University of Santa Clara, Santa Clara California in 1975 and his M.Sc. and Ph.D. degrees from the University of Minnesota, Minneapolis in 1978 and 1980, respectively.


In 1980 he joined AT&T Bell Laboratories where he was a member of the Technical Staff in the Photonic Circuits Research Department. In 1989 Gadi Eisenstein joined the faculty of the Technion, Israel Institute of Technology, where he is professor of Electrical Engineering and head of the Barbara and Norman Seiden Advanced Optoelectronics Center and holds the Dianne and Mark Seiden Chair in Optoelectronics.


His current activities are in the fields of nano structure semiconductor optoelectronics, slow and fast light propagation using nonlinear fiber devices, compact atomic clocks, semiconductor micro-cavities, nonlinear semiconductor optical amplifiers, high speed transistors and photo-transistors, compact short pulse generators,  high speed optical communication and RF photonics systems.

Research Interests:

  • Slow and fast light propagation in nonlinear fibers

  • Miniature atomic clocks

  • Semiconductor microcavities

  • Dynamical properties of diodes lasers

  • Optical amplification

  • Noise properties of optoelectronic devices

  • Short pulse generation

  • High speed HBTs and photo HBTs

  • Dielectric thin films for optical coatings and high k MOS structures

  • High speed optical communication systems and RF photonic networks

Slow and fast light propagation in nonlinear fibers

Studies of slow and fast light propagation in nonlinear fibers are performed with special emphasis on the balance between delay, bandwidth and signal fidelity. Narrow band parametric amplification and stimulated Brillouin scattering with modulated pumps are the physical mechanisms employed in our research.

Miniature atomic clocks

Miniature atomic clocks based on coherent population trapping in Robidium are developed. The clocks use a directly modulated VCSEL, a glass Robidium cell and complicated microwave and control circuitry.

Semiconductor microcavities

Ultra high Q semiconductor microcavities with embedded single quantum dots are studied. The microcavities have either a pillar structure or a photonic bandgap membrane structure. Electro optic tuning is examined and experimental characterization of various electro optical properities are studied.

Dynamical properties of diodes lasers

Studies of the dynamical properties of diode lasers involve a combination of semiconductor physics, nonlinear optics and nonlinear dynamics. In past years, we have studied the dynamics of quantum well lasers and recently we are addressing quantum dot and quantum dash laser dynamics.  We are developing advanced theoretical models and perform different experiments to confirm them.

Optical amplification

Optical amplification and optical amplifiers have been a major topic in our group for many years. We are studying semiconductor optical amplifiers of all kinds (quantum well quantum dot and quantum dash) as well as nonlinear fiber amplifiers such as Raman and Parametric Fiber amplifiers.

Noise properties of optoelectronic devices

Noise properties of optoelectronic devices, mainly semiconductor optical amplifiers have been studied in our group for many years. In particular, we have pioneered theoretical and experimental work on nonlinear semiconductor optical amplifiers being the first group to identify the nonlinear signal-noise interaction which causes a noise spectral hole. This topic has been recently revisited as we study the noise of nonlinear quantum dot amplifiers where the inhomogeneous broadened gain and the fast gain dynamics alter the noise compared to conventional quantum well amplifiers.

Short pulse generation

Compact optical pulse generators are of special interest for numerous applications in communication and signal processing. We have studied diode laser based and fiber model locked lasers for many years emphasizing low jitter self starting sources.  These involve a combined diode laser photo HBT based oscillator system and are a special case of a wider family of locked oscillators we have been studying theoretically and experimentally.

High speed HBTs and photo HBTs

InP based HBT’s and photo-HBTs with state of art performance have been developed at Technion over the past few years. The use of those advanced transistor has been a major research topic in our group. Those transistors are used in a variety of RF photonic applications such as : Optoelectronic mixers, optoelectronic oscillators for high purity CW or pulsed signals, DFB laser locking for WDM systems, millimeter wave signal generation and modulation, multi rate timing extraction in high speed fiber optics receivers and optical signal processing.

Dielectric thin films for optical coatings and high k MOS structures

Our group has been engaged in dielectric coating research for two different purposes. One is optical coating where we specialize in diode laser facet coating mainly broad band low reflectivity AR coatings. The second is high-k dielectrics for MOS devices. We have developed a variety of such high-k materials including Ta2O5  TiO2  Al2O3  Er2O3 and combination thereof. In addition, we have developed a series of experimental techniques to analyze the current flow across different junctions and for the determination of current flow mechanisms and the extraction of physical parameters.

High speed optical communication systems and RF photonic networks

Several issues related to system problems are studied in our group. These include advanced simulations of WDM links RF photonic systems and schemes for timing extraction.

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