Prof. G. Bahir's Home Page

Gad Bahir

email: bahir@ee.technion.ac.il

.

Professor Gad Bahir Israeli-born, earned his degrees in physics and mathematics at Hebrew University and Technion.

He has been a Visiting Scientist at the University of Aahrus in Denmark and at Stanford University and the University of California Santa Barbara in the United States. Dr. Bahir is a recipient of the Israel Ministry of Defence Award for Scientific Innovation (92) and The University of Beer-Sheva Award for Applied Microelectronics (96).

Present research interest include optical and transport properties of compound semiconductor heterostructures. Research focuses on advanced quantum dots and quantum wells based infrared photodetectors. Other areas of interest include GaN based high-power high-speed heterostructure field effect transistor. New work on Si nano-crystal based Non Volatile Memories (NVM) is now beginning.  

Areas of research interest

• Quantum Dots Quantum wells heterostructures
• Semiconductors device physics
• Infrared photodetectors (narrow bandgap semiconductors, QWIP, QDIP)
• GaN heterostructure based devices

• A. Vardi, G. Bahir, S. E. Schacham, P. K. Kandaswamy, and E Monroy, “Photocurrent characterization of intraband transition in GaN\AlN quantum dots”, Journal of Physics Conference Series, in press (2010).
   

• A. Albo, C. Cytermann, G. Bahir, and D. Fekete, “Utilizing the interface adsorption of nitrogen for the growth of high-quality GaInAsN/GaAs quantum wells by metal organic chemical vapor deposition for near infrared applications”, Appl. Phys. Lett., 96, 141102 (2010).
   

• H. Machhadani, P. Kandaswamy, S. Sakr, A. Vardi, A. Wirtmüller, L. Nevou, F. Guillot, G. Pozzovivo, M. Tchernycheva, A. Lupu, L. Vivien, P. Crozat, E. Warde, C. Bougerol, S. Schacham, G. Strasser, G. Bahir, E. Monroy, and F. H. Julien, “GaN/AlGaN intersubband optoelectronic devices”, New Journal of Physics, 11, 125023 (2009).
   

• H. Machhadani, P. Kandaswamy, S. Sakr, A. Vardi, A. Wirtmüller, L. Nevou, F. Guillot, G. Pozzovivo, M. Tchernycheva, A. Lupu, L. Vivien, P. Crozat, E. Warde, C. Bougerol, S. Schacham, G. Strasser, G. Bahir, E. Monroy, and F. H. Julien, “GaN/AlGaN intersubband optoelectronic devices”, New Journal of Physics, 11, 125023 (2009).
   

• A. Albo, A. Vardi, D. Fekete, and G. Bahir, “Polarization independent intersubband based GaInAsN quantum-well photodetector with dominant detection at 1.42 µm”, Appl. Phys. Lett., 94, 093503 (2009).
   

• N. Akopian, A. Vardi, G. Bahir, V. Garber, E. Ehrenfreund, D. Gershoni, C. Poblenz, C. R. Elsass, I. P. Smorchkova, and J. S. Speck, “Fermi edge singularity observed in GaN/AlGaN heterointerfaces”, Appl. Phys. Lett., 94, 223502 (2009).
   

• A. Albo, G. Bahir, and D. Fekete, “Strain-induced nitrogen incorporation in atomic layer epitaxy growth of InGaAsN/GaAs quantum wells using metal organic chemical vapor deposition”, Appl. Phys. Lett., 95, 051102 (2009).
   

• A. Vardi, G. Bahir, S. E. Schacham, P. K. Kandaswamy, and E. Monroy, “Photocurrent Spectroscopy of Bound-to-Bound Intraband Transitions in GaN/AlN Quantum Dots”, Phys. Rev. B., 80,155439 (2009).
   

• A. Vardi and G. Bahir, F. Guillot, C. Bougerol and E. Monroy, S. E. Schacham,M. Tchernycheva, and F. H. Julien, “Near infrared quantum cascade detector in GaN/AlGaN/AlN heterostructures”, Appl. Phys. Lett., 92,011112 (2008).
   

• Z. Bashir, G. Bahir, C. Saguy, R. Edrei, A. Hoffman, R. A. Rao, R. Muralidhar, and K-M. Chang, “Study of Single Silicon Quantum Dots Band Gap and Single-Electron Charging Energies by Room Temperature Scanning Tunneling Microscopy”, Nano Letters, 8(6), 1689-1694 (2008).
   

• A. Albo, D. Fekete, and G. Bahir, “Unpolraized intersubband photocurrent in Te doped GaInAsN/GaAlAs quantum well IR photodetector”, Phys. Stat. Sol. (C), 5, 2323-2325 (2008).
   

• J. C. Zhang, B. Meyler, A. Vardi, G. Bahir and J. Salzman, “Stranski-Krastanov growth of GaN quantum dots on AlN template by metal organic vapor phase epitaxy”, Journal of Applied Physics, 104, 044307 (2008).
   

• A. Vardi, N. Kheirodin, L. Nevou, H. Machhadani, L. Vivien, P. Crozat, M. Tchernycheva, R. Colombelli, F. H. Julien, F. Guillot, C. Bougerol, E. Monroy, S. Schacham, and G. Bahir, “High-speed operation of GaN/AlGaN quantum cascade detectors at λ≈1.55 μm”, Applied Physics Letters, 93, 193509 (2008).
   

• A. Horn, O. Katz, G. Bahir, and J. Salzman, “Surface States and Persistent Photocurrent in GaN Heterostructure Field Effect Transistors”, Semiconductors Science and Technology, 21, 933 (2006).
   

• A. Vardi, N. Akopian, G. Bahir, E. Monroy, F. Guillot, M. Tchernycheva, L. Nevou, and F. H. Julien, “Room Temperature Demonstration of GaN/AlN Quantum Dot Intraband Infrared Photodetector at Optical Communication Wavelength”, Applied Physics Letters, 88, 143101 (2006).
   

• D. Mistele, O. Katz, A. Horn, G. Bahir, and J. Salzman, “Engineering and Impact of Surface States on AIGaN/GaN-Based Heterostucture Field Effect Transistors”, Semicond. Sci. Technol., 20, 972-978 (2005).
   

• D. A. Redfern, W. Fang, K. Ito, G. Bahir, C. A. Musca, J. M. Dell, and L. Faraone, “Application of Laser Beam Induced Current Techniques to Heterojunction Photodiode Characterization”, J. Appl. Phys., 98, 034501 (2005).
   

• O. Katz, G. Bahir, and J. Salzman, “Low Frequency Noise Persistent Transient in Barrier Controlled Devices AlGaN/GaN Heterostructure Field Effect Transistors”, IEEE Electron. Device Letters, 26, 345 (2005).
   

• N. Akopian, G. Bahir D. Gershoni, M. Craven, S. DenBaars, and J. Speck, “Optical Evidence for Lack of Polarization in Oriented GaN/AlGaN Qantum Sructures”, Appl. Phys. Lett., 86, 202104 (2005).
   

• G. Bahir, E. Finkman, F. Fossard, F.H. Julien, J. Brault, M. Gendry, and S.E. Schacham, “Intraband Polaron Dynamics of Exited Carriers in InAs/InAlAs Quantum Dots”, Physical Review B, 71, 075327 (2005).
   

• O. Katz, D. Mistele, B. Meyler, G. Bahir, and J. Salzman, “Characteristics of InxAl1-xN/GaN High Electron Mobility Field-Effect Transistor”, IEEE Trans. on Electron Devices, 52, 146 (2005).
   

• O. Katz, Y. Roichman, G. Bahir, N. Tessler, and J. Salzman, “Charge Carrier Mobility in Field Effect Transistors: Analysis of Capacitance Conductance Measurements”, Semiconductors Science and Technology, 20, 90-94 (2004).
   

• T. Raz, N. Shual, D. Ritter, and G. Bahir, D. Gershoni, and S.N.G Chu, “Galium Diffusion Into Self Assembled InAs Quantum Dots Grown on Indium Phosphide”, Appl. Phys. Lett., 85, 3578 (2004).
   

• O. Katz, D. Mistele, B. Meyler, G. Bahir, and J. Salzman, “InAlN/GaN Heterostructure Field-Effect Transistor DC and Small Signal Characteristics”, Electron.. Lett., 40, 1304 (2004).
   

• O. Katz, G. Bahir, and J. Salzman, “Persistent Photocurrent and Surface Trapping in GaN Schottky Ultraviolet Detectors”, Appl. Phys. Lett., 84, 4092-4094 (2004).
   

• F. Fossard, A. Helman, G. Fisman, F. Julien, J. Brault, M. Gendry, E. Peronne, A. Alexandrou, S. E. Schacham G. Bahir, and E. Finkman, “Spectroscopy of the Electronic States in InAs Quantum Dots Grown on InAlAs/InP(001)”, Phys. Rev. B. 69, 155333 (2004).
   

• O. Kreinin, G. Bahir, and J. Salzman, “Growth of GaN and InGaN by Rapid Thermal MOCVD”, Phys. Stat. Sol. (a), 195, 3-10 (2003).
   

• O. Katz, A. Horn, G. Bahir, and J. S. Salzman, “Electron Mobility in an AlGaN/GaN Two Dimensional Electron Gas I – Carrier Concentration Dependent Mobility”, IEEE Transaction Electron Devices, 50, 2002-2008 (2003).
   

• S.E. Schacham, W. Sheng, J.P. Leburton,  F. Fossard, F.H. Julien, M. Gendry, E. Finkman, N. Shuall, and G. Bahir, “Enhanced Photoconductive Signal in InAs Quantum Dots Due to Plasma Confined Microcavity”, Phys. Rev. B 68, 041309 (2003).
   

• S.E. Schacham, G. Bahir, E. Finkman, F. Fossard, F.H. Julien, J. Brault, and M. Gendry, “Photoconductive Spectral Analysis of InAs Quantum Dots under Normal Incidence”, Infrared Physics and Technology, 44, 509-512 (2003).
   

• S.E. Schacham, G. Bahir, E. Finkman, F. Fossard, F.H. Julien, J. Brault, and M. Gendry,  “Temperature Dependence of Responsivity in Quantum Dot Infrared Photodetectors”, Physica E, 17, 636-637 (2003).
   

• D. Mistele , T. Rotter , A. Horn , O. Katz , Z. Bougrioua , J. Aderhold , J. Graul , G. Bahir , and J. Salzman , “Incorporation of Dielectric Layers into the Processing of III-Nitride Based Heterostructure FETs”,  Journal of Electronics Materials, 32, 355-363 (2003).
   

• T. Raz, D. Ritter and G. Bahir, “Formation of InAs Self-Assembled Quantum Rings on InP”,  Appl. Phys. Lett., 82, 1706-1708 (2003).
   

• O. Kreinin and G. Bahir “Rapid Thermal Low-Pressure Metal Organic Chemical Vapor Deposition of Fe-doped InP Layers”, Appl. Phys. Lett. 80, 422-424 (2002).
   

• O. Katz, V. Garber, B. Meyler, G. Bahir, and S. Salzman, “Anisotropy in Detectivity of GaN Schottky UV Detectors”. Appl. Phys. Lett. 80, 347-349 (2002).
   

• O. Katz, V. Garber, B. Meyler, G. Bahir, and J. Salzman, “Vertical Versus Lateral GaN Schottky Ultraviolet detectors and Their Gain Mechanisms”, Phys. Status Solidi A 188, 345-349 (2001).
   

• O. Katz, V. Garber, B. Meyler, G. Bahir and J. Salzman, “Gain Mechanism in GaN Schottky UV Detectors”, Appl. Phys. Lett., 79, 1417-1419 (2001).
   

• Y. L. Khait, V. Garber, I Snapiro and G. Bahir, “Suppression of 1/f Noise by Permanent Magnetic Fields in Ion Implanted HgCdTe Photodiodes”, Appl. Phys. Lett. 79, 2990-2992 (2001).
   

• Y. Gusakov, G. Bahir, E. Finkman, and D. Ritter, “The Effect of Strain in InP/InGaAs QWIP on the Detector Operating Wavelength”, Appl. Phys. Lett. 79, 2508-2510 (2001).
   

• V. Garber, A. Dust, E. Baskin, B. Spektor, and G. Bahir, “Estimation of p-n junction depth in LWIR HgCdTe Detectors From Spatial Profile of Lateral Photocurrent and Transverse Photovoltage Induced By Infrared Small Spot”, J. of Electronic Materials, 30, 690-695 (2001).
   

• G. Bahir, V. Garber, and A. Dust, “Characterization of a New Planar Process for implementation of p-on-n HgCdTe Photodiodes”, J. of Electronic Materials 30, 704-710 (2001).
   

• G. Bahir, V. Garber, and D. Rosenfeld, “Planar p-on-n HgCdTe Heterostructure Infrared Photodiodes”, Appl. Phys. Lett., 78, 1331-1333 (2001).
   

• E. Finkman, S. Maimon, V. Immer, G. Bahir, S. E. Schacham, F. Fossard, F. H. Julien, J. Brault and M. Gendry, “Polarized Front-illumination Response in Intraband Quantum Dot Infrared Photodetectors AT 77 K”, Phys. Rev. B 63, 0455323 (2001).
   

• Berkowicz, D. Gershoni, G. Bahir, E. Lakin, D. Shilo, E. Zolotoyabko, A.C. Abare, S.P. DenBaars, and L.A. Coldren, “Optical and X-Ray Characterization of InGaN/GaN Quantum Structures”, Phys. Rev. B, 61, 10994 (2000).
   

• E. Finkman, S. Maimon, V. Immer, G. Bahir, S. E. Schacham, O. Gauthier-Lafaye, S. Herriot, F. H. Julien, M. Gendry, and J. Brault, “Quantum Dot Infrared Detectors in New Material Systems”, Physica E 7, 139 (2000).
   

• E. Berkowicz, D. Gershoni, G. Bahir, A.C. Abare, S.P. DenBaars, and L.A. Coldren, “Optical Spectroscopy of GaN/InGaN Quantum Wells”, Phys. Stat. Sol. (b) 216, 291 (1999).
   

• N. Mainzer, E. Zolotoyabco, R. Brener, A. Lakin, G. Bahir, and A. Sher, “Effect of Extended Defects on the Composition of HgCdTe Epilayers”, J. of Electronic Materials, 28, 850 (1999).
   

• N. Mainzer, E. Zolotoyabco, R. Brener, A. Lakin, G. Bahir, and A. Sher, “Influence of Structural Defects on Lattice Parameters and Measured Composition of HgCdTe Epilayers”, J. Cryst. Growth 197, 542 (1999).
   

• V. Mikhaelshvili, G. Eisenstein, V. Garber, S. Faileinb, G. Bahir, D. Ritter, and M. Orenstein, “On the Extraction of Linear and Non-Linear Physical Parameters in Non Ideal Diodes”, J. Appl. Phys. 85, 6873 (1999).
   

• G. M. Cohen, P. Zisman, G. Bahir, and D. Ritter, “Growth of Strained GaInP on InP by MOMBE for HFET Applications”, J. of Vacuum Science and Technology B. 16, 2639 (1998).
   

• S. Maimon, G. Cohen, E. Finkman, G. Bahir, and D. Ritter, “Strain Compensated InGaAs/InGaP Quantum Well Infrared Detector for Mid-Wavelength Band Detection”, Appl. Phys. Lett., Vol. 73, 800 (1998).
   

• S. Maimon, E. Finkman, G. Bahir, S. Schacham, J. Garcia, and P.M. Petroff, “Intersublevel Transitions in Quantum Dots Infrared Photodetector”, Appl. Phys. Lett., Vol. 73, 2003 (1998).
   

• S. Maimon, E. Finkman, S.E. Schacham, D. Ritter, and G. Bahir, “Measurement of Electron Capture Probability in Quantum Well”, J. Physica E. Low Dimensional System and Nano Structures. Vol. 2, 228 (1998).
   

• S. Maimon, S.E. Schacham, G. Bahir and E. Finkman, “Limited Potential Model for Unscreened Ionized Impurity Scattering in Multi-Quantum Well Structures”, J. of Superlattices and Microstructures. Vol. 23, 323 (1998).
   

• V. Ariel, V. Garber, G. Bahir, A. Raizman and Sher, “Characterization of Multilayer HgCdTe Heterostructures by Differential Absorption Spectroscopy”, Appl. Phys. Lett., 70, 1849 (1997).
   

• N. Mainzer, D. Shilo, and E. Zolotoyabko, “Measurement of Depth-Dependent Atomic Concentration Profiles in CdTe/HgCdTe Structures”, J. Appl. Phys., 82, 2869 (1997).
   

• V. Ariel and G. Bahir, “Description of HgCdTe Materials and Devices Using an Approximate K*P Model”, J. of Electronic Materials, Vol. 26, 673 (1997).
   

• N. Mainzer, D. Shilo, E. Zolotoyabko, A. Sher, and G. Bahir, “Characterization of CdTe/HgCdTe Heterostructures by High Resolution X Ray Diffraction”, J. of Electronics Materials, Vol. 26, 606 (1997).
   

• S. Maimon, S.E. Schacham, G. Bahir, and E. Finkman, “Mobility Modulation in Vertical Transport of Hot Electrons in Multi-quantum Well Structures”, Phys. Rev. B., 54, 5696 (1996).