Electronic Materials and Devices Group

 

 

 

Publications

 

 

 

Dissertations

 

·       Shraga Kraus’ PhD Fast Delta-Sigma Analog-to-Digital Converter Based on InP/GaInAs HBTs (English with Hebrew abstract). August 2011.

·       Ran Halevy's MSc – A Method for measuring the specific interface resistivity between two semiconductor layers and its application to a heavily doped n-type InP/GaInAs heterostructure (English with Hebrew abstract). June 2011.

·       Doron Cohen-Elias’ PhD – Ultra Small Fast Indium Phosphide Based Transistors (Hebrew with English abstract). March 2011.

·       Eli Bloch’s MSc – An InP Based Broadband Differential Transimpedance Amplifier for 40Gbs DPSK Photoreceivers (English with Hebrew abstract). October 2010.

·       Avi Sayag’s MSc – High Frequency CMOS Low Noise Amplifier Design Methodology using Slow Wave Transmission Lines (Hebrew with English abstract). February 2009.

·       Tsufit Magrisso’s MSc InP HBT Voltage Controlled Oscillator (Hebrew with English abstract). December 2008.

·       Gennady Burdo’s MSc – Linear Broadband Amplifier in InP HBT Technology (Hebrew with English abstract). September 2006.

·       Shraga Kraus’ MSc – An InP-Based Optoelectronic Integrated Circuit for Optical Communication Systems (English with Hebrew abstract). May 2006.

·       Doron Cohen-Elias’ MSc – Control of Current Limiting Phenomena in Bipolar Transistor by a Non-Uniform Doping Profile in the Collector (Hebrew with English abstract). April 2006.

·       Benny Sheinman’s PhD – Modeling and Performance of Ultrafast InP Based Heterojunction Bipolar Transistors and Circuits (English with Hebrew abstract). October 2004.

 

 

Recent Journal Articles

 

·       E. Yalon, S. Cohen, A. Gavrilov and D. Ritter, “Evaluation of the local temperature of conductive filaments in resistive switching materials,” Nanotechnology, vol. 23, pp. 465201, 2012.

·       Y. Calahorra, Y. Greenberg, S. Cohen and D. Ritter, "Native-oxide-based selective area growth of InP nanowires via metal–organic molecular beam epitaxy mediated by surface diffusion," Nanotechnology, vol. 23, pp. 245603, 2012.

·       I. Krylov, L. Kornblum, A. Gavrilov, D. Ritter, and M. Eizenberg, " Experimental evidence for the correlation between the weak inversion hump and near midgap states in dielectric/InGaAs interfaces ", Appl. Phys. Lett, vol. 100, no. 17, p. 173508 , April 2012.

·       E. Yalon, A. Gavrilov, S. Cohen, D. Mistele, B. Meyler, J. Salzman, and D. Ritter, "Resistive Switching in HfO2 probed by a Metal Insulator Semiconductor Bipolar Transistor", IEEE Electron Device Lett., vol.33, no.1, pp.11-13, Jan. 2012.

·       I. Krylov, A. Gavrilov, D. Ritter, and M. Eizenberg, "Elimination of the weak inversion hump in Si3N4/InGaAs (001) gate stacks using an in situ NH3 pre-treatment ", Appl. Phys. Lett, vol. 99, no. 20, p. 203504, Nov. 2011.

·       E. Bloch, D. Mistele, R. Brener, C. Cytermann, A. Gavrilov and D. Ritter, " NiCr thin film resistor integration with InP technology", Semicond. Sci. Technol., vol. 26, pp. 105004, OCT 12, 2011.

·       E. Yalon, A. Gavrilov, S. Cohen, D. Mistele, V. Mikhelashvili B. Meyler, J. Salzman, and D. Ritter, "Tunneling Emitter Bipolar Transistor as a Characterization Tool for Dielectrics and their Interfaces," ECS Trans. vol. 41, no. 3, pp. 325-334, Oct. 2011.

·       I. Krylov, A. Gavrilov, S. Cohen, D. Ritter and M. Eizenberg, "Si3N4 as a useful dielectric for InGaAs MIS stacks," ECS Trans. vol. 41, no. 3, pp. 255-263, Oct. 2011.

·       D. Cohen Elias, A. Gavrilov, S. Cohen, S. Kraus and D. Ritter  ”A Double Heterojunction Bipolar Transistor having a Degenerately Doped Emitter and Backward-Diode Base Contact”, IEEE Transactions on Electron Devices, vol.58, no.7, pp.1952-1956, July 2011.

·       Kraus, S.; Kallfass, I.; Makon, R.E.; Driad, R.; Moyal, M.; Ritter, D.; , “A 20-GHz Bipolar Latched Comparator With Improved Sensitivity Implemented in InP HBT Technology,” Microwave Theory and Techniques, IEEE Transactions on , vol.59, no.3, pp.707-715, March 2011

·       E. Yalon, D. Cohen Elias, A. Gavrilov, S. Cohen, R. Halevy, and D. Ritter, “A Degenerately Doped In0.53Ga0.47As Bipolar Junction Transistor,” IEEE Electron Device Lett., vol.32, no.1, pp.21-23, Jan. 2011.

·       D. Ramon, R. Liraz Lidji, D. Cohen Elias, A. Gavrilov, S. Cohen, and D. Ritter “Electron transport through abrupt type I double heterojunction bipolar transistors” IEEE Transactions on Electron Devices, vol.57, no.6, pp.1466-1469, June 2010.

·       Cohen, E.; Jakobson, C.G.; Ravid, S.; Ritter, D.; , “A Bidirectional TX/RX Four-Element Phased Array at 60 GHz With RF-IF Conversion Block in 90-nm CMOS Process,” Microwave Theory and Techniques, IEEE Transactions on , vol.58, no.5, pp.1438-1446, May 2010.

·       Sayag, A.; Ritter, D.; Goren, D., “Compact Modeling and Comparative Analysis of Silicon-Chip Slow-Wave Transmission Lines With Slotted Bottom Metal Ground Planes,” Microwave Theory and Techniques, IEEE Transactions on , vol.57, no.4, pp.840-847, April 2009.

·       D. Cohen Elias, A. Gavrilov, S. Cohen, S. Kraus, A. Sayag, and D. Ritter “Abrupt Delta Doped InP/GaInAs/InP DHBTs with 0.45 Micron Wide T Shaped Emitter Contacts” IEEE Electron Device Letters, vol. 29, no. 9, September 2008.

·       Evgeny Shumakher, Tsufit Magrisso, Shraga Kraus, Doron Cohen-Elias, Arkady Gavrilov, Shimon Cohen, Gadi Eisenstein, and Dan Ritter, “An InP HBT-based oscillator monolithically integrated with a photodiode”, IEEE Journal of Lightwave Technology, Vol. 26, No. 15, pp. 2679-2683, August 2008.

·       B. Sheinman and D. Ritter “Base charge dynamics and its representation in the small and large signal models of abrupt base-emitter junction HBTs” IEEE Transaction on Electron Devices, Vol. 54, pp.632-6 (2006).

·       E. Cohen, Y. Betser, B. Sheinman, S. Cohen, S. Sidorov, A. Gavrilov, and D. Ritter, “75 GHz InP HBT distributed amplifier with record figures of merit and low power dissipation”, IEEE Trans. on Electron Devices, Vol. 50, No. 2, pp. 392-394, February 2006.

·       D. Cohen Elias and D. Ritter,  “Kirk effect in bipolar transistors with a non-uniform dopant profile in the collector”, IEEE Electron Device Letters, Vol. 27, No. 1, pp. 25-27, January 2006.

·       D. Cohen Elias, S. Kraus, A. Gavrilov, S. Cohen, N. Buadana, V. Sidorov, and D. Ritter,  “An abrubt InPGaInAsInP DHBT”, IEEE Electron Device Letters, Vol. 26, No. 1, pp. 14-16, January 2005.

 

 

Recent Talks and Conference Proceedings

 

 

·       E. Yalon, I. Riess, and D. Ritter, “Heat Dissipation Mechanisms in Resistive Switching Devices”, in Proc. IEEE NVM Technol. Symp., Aug. 2013. (invited talk).

·       E. Yalon, A. Gavrilov, S. Cohen, and D. Ritter, “Validation and Extension of the Temperature Extraction Method of Conductive Filaments in Resistive Switching Materials,” 71st Annu. Device Research Conf., June 2013.

·       E. Yalon and D. Ritter, “Metal-insulator-semiconductor bipolar transistor as a 4F2 vertical RRAM selection device,” in Proc. IEEE NVM Technol. Symp., Oct.-Nov. 2012.

·       E. Bloch, H. Park, T. Reed, Z. Griffith, M. Lu, L. A. Johansson, L. A. Coldren, D. Ritter and M. J. Rodwell, "A 1-20 GHz InP HBT phase-lock-loop IC for optical wavelength synthesis," IMS2012.

·       E. Yalon, S. Cohen, A. Gavrilov, B. Meyler, J. Salzman, and D. Ritter, "Experimental Evaluation of the Temperature in Conductive Filaments Created in Resistive Switching Materials", Frontiers in Electronic Materials: Correlation Effects and Memristive Phenomena, June 2012.

·       E. Yalon and D. Ritter, "Resistive Switching Probed by a Metal-Insulator- Semiconductor Bipolar Transistor," IEEE/ACRC Workshop on Memristors and Resistive Memory: Devices and Applications, March 2012. (link to video)

·       S. Kraus, I. Kallfass, R.E. Makon, R. Driad, M. Moyal, and D. Ritter, “A 10-GS/s multibit delta-sigma analog-to-digital converter in an InP HBT technology”, Proceedings of COMCAS 2011, November 2011.

·       Ran Halevy, Shimon Cohen, Arkadi Gavrilov, and Dan Ritter “Measurement of the Interface Specific Resistivity of a Heavily Doped n-Type InP/GaInAs Heterostructure” Proceedings of the 2011 International Conference on Indium Phosphide and Related Materials, May 2011.

·       E. Yalon, D. Cohen Elias, A. Gavrilov, S. Cohen, R. Halevy, and D. Ritter, “An InGaAs Bipolar Junction Transistor having Degenerately Doped Base and Emitter Layers,” 68th Annu. Device Research Conf., June 2010, late news.

·       D. Cohen Elias, A. Gavrilov, S. Cohen, S. Kraus, and D. Ritter, “InP DHBTs having simultaneously deposited base and emitter contacts”, Proceedings of the 2010 International Conference on Indium Phosphide and Related Materials, June 2010.

·       D. Cohen Elias, A. Gavrilov, S. Cohen, S. Kraus, and D. Ritter, “InP DHBTs having sidewall and lateral collector Schottky contacts”, Proceedings of the 2010 International Conference on Indium Phosphide and Related Materials, June 2010.

·       S. Kraus, I. Kallfass, R.E. Makon, J. Rosenzweig,R. Driad, M. Moyal, and D. Ritter, “High Linearity 2-Bit Current Steering InP/GaInAs DHBT Digital-to-Analog Converter” Proceedings of the 2010 International Conference on Indium Phosphide and Related Materials, June 2010.

·       S. Kraus, R.E. Makon, I. Kallfass, R. Driad, M. Moyal and D. Ritter ” Sensitivity of a 20-GS/s InP DHBT Latched Comparator” Proceedings of the 2010 International Conference on Indium Phosphide and Related Materials, June 2010.

·       Cohen, Emanuel; Jakobson, Claudio; Ravid, Shmuel; Ritter, Dan; , “A thirty two element phased-array transceiver at 60GHz with RF-IF conversion block in 90nm flip chip CMOS process,” Radio Frequency Integrated Circuits Symposium (RFIC), 2010 IEEE , vol., no., pp.457-460, 23-25 May 2010.

·       Cohen, E.; Jakobson, C.; Ravid, S.; Ritter, D.; , “A bidirectional TX/RX four element phased-array at 60GHz with RF-IF conversion block in 90nm CMOS process,” Radio Frequency Integrated Circuits Symposium, 2009. RFIC 2009. IEEE , vol., no., pp.207-210, 7-9 June 2009.

·       Cohen, E.; Ravid, S.; Ritter, D.; , “60GHz 45nm PA for linear OFDM signal with predistortion correction achieving 6.1% PAE and −28dB EVM,” Radio Frequency Integrated Circuits Symposium, 2009. RFIC 2009. IEEE , vol., no., pp.35-38, 7-9 June 2009.

·       A. Sayag, S. Levin, D. Regev, D. Zfira, S. Shapira, D. Goren, and D. Ritter “One Stage 24 GHz LNA with 6.4 dB Gain 2.8 dB NF using 0.18 μm CMOS Technology and Slow Wave Transmission Lines” Proceedings of the International IEEE Conference on Microwaves, Communications, Antennas and Electronic Systems (IEEE COMCAS 2008).

·       Emanuel Cohen, Shmuel Ravid, and Dan Ritter “An ultra low power LNA with 15 dB gain and 4.4 db NF in 90nm CMOS process for 60 GHz phase array radio” proceedings of the IEEE RFIC Symposium, 2008.

·       A. Sayag, S. Levin, D. Regev, D. Zfira, S. Shapira, D. Goren and D. Ritter “A 25 GHz 3.3 dB NF Low Noise Amplifier based upon Slow Wave Transmission Lines and the 0.18 μm CMOS Technology” proceedings of the IEEE RFIC Symposium, 2008.

·       D. Cohen Elias, A. Gavrilov, S. Cohen, S. Kraus, and D. Ritter, “DHBT with Esaki Base Emitter Junction Having a 60 nm Wide Emitter Contact” Proceedings of the 2008 International Conference on Indium Phosphide and Related Materials.

·       T. Magrisso, D. Elad, N. Buadana, S. Kraus, D. Cohen Elias, A. Gavrilov, S. Cohen, and D. Ritter, "An X-Band Low Noise InP-HBT VCO with Separate Optimized Varactor Layers", International Microwave Symposium , pp. 661-664., June 2007.

·       S. Kraus, D. Cohen-Elias, S. Cohen, A. Gavrilov, O. Karni, Y. Swirski, G. Eisenstein, and D. Ritter, “High-gain top-illuminated optoelectronic integrated receiver”, 2007 International Conference on Indium Phosphide and Related Materials, pp. 77-80, May 2007.

·       D. Cohen Elias, S. Kraus, A. Gavrilov, S. Cohen, N. Buadana, V. Sidorov, and D. Ritter, “Design and performance of InP/GaInAs/InP abrupt DHBTs”, 2005 International Conference on Indium Phosphide and Related Materials, pp. 449-451, May 2005.

·       E. Cohen, Y. Betser, B. Sheinman, S. Cohen, V. Sidorov, A. Gavrilov, and D. Ritter, “75 GHz InP HBT distributed amplifier with record figures of merit and low power dissipation for OEIC applications”, 2005 International Conference on Indium Phosphide and Related Materials, pp. 609-612, May 2005.

 

 

 

 

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